SFF450M
SFF450Z
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
13 AMP / 500 Volts
0.4 Ω
SFF450
__ __ __
Screening 2/ __ = Not Screen
TX = TX Level
N-Channel POWER MOSFET
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
TXV = TXV Level
S = S Level
Features:
Lead Option 3/ __ = Straight Leads
DB = Down Bend
• Rugged Construction with Polysilicon Gate Cell
• Low RDS(ON) and High Transconductance
• Excellent High Temperature Stability
• Very Fast Switching Speed
• Fast Recovery and Superior dV/dt Performance
• Increased Reverse Energy Capability
UB = Up Bend
Package 3/ M = TO-254
Z = TO-254Z
• Low Input and Transfer Capacitance for Easy Paralleling
• Ceramic Seals Available for Improved Hermeticity
• Hermetically Sealed Surface Mount Power Package
• TX, TXV, Space Level Screening Available
• Replacement for IRFM450 Types
Maximum Ratings
Symbol
VDS
Value
500
Units
Volts
Volts
Amps
ºC
Drain – Source Voltage
Gate – Source Voltage
VGS
±20
Continuous Collector Current
Operating & Storage Temperature
ID
13
Top & Tstg
-55 to +150
Maximum Thermal Resistance
Junction to Case
1
ºC/W
W
RθJC
PD
TC = 25ºC
TC = 55ºC
125
95
Total Device Dissipation
TO-254 (M)
TO-254Z (Z)
For Pin Out Configuration and Optional Lead Bend, Se Page 3.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00097E
DOC