Datasheet > F00097

F00097

更新时间： 2024-02-04 17:46:03

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	130K
描述
N-Channel POWER MOSFET

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数据手册

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F00097 数据手册

SFF450M

SFF450Z

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

13 AMP / 500 Volts

0.4 Ω

SFF450

__ __ __

Screening ^2/__ = Not Screen

TX = TX Level

N-Channel POWER MOSFET

│

└

│

└

TXV = TXV Level

S = S Level

Features:

Lead Option ^3/__ = Straight Leads

DB = Down Bend

• Rugged Construction with Polysilicon Gate Cell

• Low R_DS(ON)and High Transconductance

• Excellent High Temperature Stability

• Very Fast Switching Speed

• Fast Recovery and Superior dV/dt Performance

• Increased Reverse Energy Capability

UB = Up Bend

Package ^3/M = TO-254

Z = TO-254Z

• Low Input and Transfer Capacitance for Easy Paralleling

• Ceramic Seals Available for Improved Hermeticity

• Hermetically Sealed Surface Mount Power Package

• TX, TXV, Space Level Screening Available

• Replacement for IRFM450 Types

Maximum Ratings

Symbol

V_DS

Value

500

Units

Volts

Amps

ºC

Drain – Source Voltage

Gate – Source Voltage

V_GS

±20

Continuous Collector Current

Operating & Storage Temperature

I_D

Top & Tstg

-55 to +150

Maximum Thermal Resistance

Junction to Case

ºC/W

R_θJC

P_D

T_C= 25ºC

T_C= 55ºC

125

Total Device Dissipation

TO-254 (M)

TO-254Z (Z)

For Pin Out Configuration and Optional Lead Bend, Se Page 3.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00097E

DOC

12 3

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