Datasheet > ESD9L5.0ST5GH

ESD9L5.0ST5GH

更新时间： 2024-02-24 10:39:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	126K
描述
Low Capacitance ESD Protection; Unidirectional

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技术参数
数据手册

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ESD9L5.0ST5GH 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

ESD9L5.0ST5GH 数据手册

ESD9L5.0ST5G

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

BR RWM

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

Peak Power Dissipation

Capacitance @ V = 0 and f = 1.0 MHz

Uni−Directional TVS

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.0 V Max. @ I = 10 mA for all types)

(V)

RWM

(mA)

V (V) @ I

BR T

@ I = 1 A

(V)

@ V

(Note 2)

(Note 3)

C (pF)

RWM

Per IEC61000−4−2

Device

Marking

(Note 4)

Max

1.0

Min

Typ

0.5

Max

Device

ESD9L5.0ST5G

5.0

5.4

1.0

0.9

9.8

Figures 1 and 2

See Below

2. V is measured with a pulse test current I at an ambient temperature of 25°C.

3. Surge current waveform per Figure 5.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Figure 2. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Negative 8 kV Contact per IEC61000−4−2

http://onsemi.com

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