Datasheet > ESD5.0DT5G

ESD5.0DT5G

更新时间： 2024-11-18 06:57:55

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	77K
描述
ESD Protection Diodes In Ultra Small SOT-723 Package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ESD5.0DT5G 数据手册

mESD3.3DT5G SERIES

ESD Protection Diodes

In Ultra Small SOT-723 Package

The mESD Series is designed to protect voltage sensitive components

from ESD. Excellent clamping capability, low leakage, and fast response

time, make these parts ideal for ESD protection on designs where board

space is at a premium. Because of its small size, it is suited for use in

cellular phones, portable devices, digital cameras, power supplies and

many other portable applications.

http://onsemi.com

PIN 1. CATHODE

2. CATHODE

3. ANODE

Specification Features:

•ꢀSmall Body Outline Dimensions:

0.047″ x 0.032″ (1.20 mm x 0.80 mm)

•ꢀLow Body Height: 0.020″ (0.5 mm)

•ꢀStand-off Voltage: 3.3 V - 6.0 V

•ꢀLow Leakage

MARKING

DIAGRAM

•ꢀResponse Time is Typically < 1 ns

•ꢀESD Rating of Class 3 (> 16 kV) per Human Body Model

•ꢀIEC61000-4-2 Level 4 ESD Protection

•ꢀIEC61000-4-4 Level 4 EFT Protection

•ꢀThese are Pb-Free Devices

xx M

SOT-723

CASE 631AA

STYLE 4

xx = Device Code

= Date Code

Mechanical Characteristics:

CASE: Void‐free, transfer‐molded, thermosetting plastic

Epoxy Meets UL 94 V-0

ORDERING INFORMATION

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

†

Device

mESDxxDT5G

Package

Shipping

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

SOT-723 8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MAXIMUM RATINGS

Rating

IEC 61000-4-2 (ESD)

Symbol

Value

Unit

Air

Contact

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the table on page 2 of this data sheet.

IEC 61000-4-4 (EFT)

ESD Voltage

Per Human Body Model

Per Machine Model

400

Total Power Dissipation on FR-5 Board

(Note 1) @ T = 25°C

Derate above 25°C

Thermal Resistance Junction-to-Ambient

⎪

mW/°C

°C/W

240

1.9

525

Junction and Storage Temperature Range

T , T

-55 to

+150

°C

stg

Lead Solder Temperature - Maximum

(10 Second Duration)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-5 = 1.0 x 0.75 x 0.62 in.

February, 2008 - Rev. 2

Publication Order Number:

mESD3.3DT5G/D

12 3 4

中文翻译

下载PDF

与ESD5.0DT5G相关器件

型号	品牌	获取价格	描述	数据表
ESD5.0LM9	RECTRON	获取价格	Reverse Current Ir : 1.0 uA;Package / Case : SOD923;Breakdown Voltage Vbr : 6.0 V;Operatin
ESD5.0ST5G	ONSEMI	获取价格	ESD Protection Diodes In Ultra Small SOD-723 Package
ESD5.0V12D-A	SOCAY	获取价格	Transient Voltage Suppressors for ESD Protection
ESD5.0V12D-C	SOCAY	获取价格	Transient Voltage Suppressors for ESD Protection
ESD5.0XM3	RECTRON	获取价格	Reverse Current Ir : 1 uA;Package / Case : SOD-323F;Breakdown Voltage Vbr : 6.2 V;Operatin
ESD5.0XM3V	RECTRON	获取价格	Reverse Current Ir : 1 uA;Package / Case : SOD-323F;Breakdown Voltage Vbr : 6.2 V;Operatin
ESD50	COOPER	获取价格	Circuit Protection Solutions Low Voltage Fuse Links Catalogue
ESD5004	ONSEMI	获取价格	ESD Protection Diode
ESD5004_17	ONSEMI	获取价格	ESD Protection Diode
ESD5004MXTBG	ONSEMI	获取价格	ESD Protection Diode

与ESD5.0DT5G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

ESD5.0DT5G

ESD5.0DT5G 数据手册

与ESD5.0DT5G相关器件

与ESD5.0DT5G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ESD5.0DT5G

ESD5.0DT5G 数据手册

与ESD5.0DT5G相关器件

与ESD5.0DT5G相关文章

您还可以找

您在本页遇到什么问题？