Datasheet > ES3C-C-Q1

ES3C-C-Q1

更新时间： 2024-10-31 18:06:39

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
3页	1782K
描述
SMC

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中文翻译

获取价格

数据手册

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ES3C-C-Q1 数据手册

ES3A-C-Q1 THRU ES3J-C-Q1

A Surface Mount Super

3.0

Fast Rectifiers-50-600V

Features

Package outline

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

SMC/DO-214AB

For surface mounted applications

Super fast switching for high efficiency

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

0.245(6.22)

0.220(5.59)

0.126 (3.20)

0.114 (2.90)

High temperature soldering guaranteed:

250 C/10 seconds at terminals

Glass passivated chip junction

Compliant to RoHS Directive 2011/65/EU

Compliant to Halogen-free

0.280(7.11)

0.260(6.60)

0.012(0.305)

0.006(0.152)

Suffix "-Q1" for AEC-Q101

0.103(2.62)

0.079(2.06)

Mechanical data

Case: JEDEC DO-214AB molded plastic body

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

0.320(8.13)

0.305(7.75)

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)

MAX.

Symbol

TYP.

UNIT

MIN.

PARAMETER

CONDITIONS

I_O

Forward rectified current

See Fig.1

3.0

I_FSM

100

Forward surge current

8.3ms single half sine-wave (JEDEC methode)

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 100^OC

5.0

I_R

Reverse current

μA

Junction to ambient

NOTE 1

^OC/W

Thermal resistance

R_θJA

C_J

^OC

Diode junction capacitance

Storage temperature

f=1MHz and applied 4V DC reverse voltage

+150

-65

T_STG

Operating

V_RMS

(V)

V_R

V_F

t_rr

SYMBOLS

V_RRM

(V)

temperature

T_J, (^OC)

(V)

(ns)

*1 Repetitive peak reverse voltage

*2 RMS voltage

ES3A-C-Q1

ES3B-C-Q1

ES3C-C-Q1

100

150

200

100

150

200

0.95

105

140

*3 Continuous reverse voltage

*4 Maximum forward voltage@I_F=3.0A

*5 Maximum Reverse recovery time, note 2

-55 to +150

ES3D-C-Q1

ES3E-C-Q1

300

400

600

210

280

420

300

400

600

1.25

1.70

ES3G-C

-Q1

ES3J-C-Q1

Note:

1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

2. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A

http://www.anbonsemi.com

Document ID

AS-1040012

Issued Date

2018/03/08

Revised Date

Revision

Page.

TEL:+86-755-23776891

2023/09/07

Page 1

FAX:+86-755-81482182

12 3

中文翻译

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与ES3C-C-Q1相关器件

型号	品牌	获取价格	描述	数据表
ES3C-E3/57T	VISHAY	获取价格	DIODE 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
ES3C-E3/9AT	VISHAY	获取价格	DIODE 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN,
ES3CF	SUNMATE	获取价格	3.0A patch fast recovery diode 150V SMBF series
ES3CF	RECTRON	获取价格	Reverse Voltage Vr : 150 V;Forward Current Io : 3.0 A;Max Surge Current : 80 A;Forward Vol
ES3CHE3	VISHAY	获取价格	DIODE 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rect
ES3CHE3/57T	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, P
ES3C-HE3/57T	VISHAY	获取价格	3A, 150V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
ES3CHE3/9AT	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, P
ES3C-HE3/9AT	VISHAY	获取价格	3A, 150V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
ES3CHE3_A/H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

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