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ES3D PDF预览

ES3D

更新时间: 2024-02-17 23:33:50
品牌 Logo 应用领域
海湾 - GULFSEMI 二极管光电二极管IOT超快速恢复二极管
页数 文件大小 规格书
2页 173K
描述
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE:50 TO 600V CURRENT:3.0A

ES3D 技术参数

生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:N应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:1000 V最大反向电流:10 µA
最大反向恢复时间:0.035 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

ES3D 数据手册

 浏览型号ES3D的Datasheet PDF文件第2页 
ES3A THRU ES3J  
SURFACE MOUNT FAST  
ULTRAFAST RECTIFIER  
VOLTAGE50 TO 600V  
CURRENT3.0A  
SMCDO-214AB  
FEATURE  
Ideal for surface mount pick and place application  
Low profile package  
Built-in strain relief  
High surge capability  
High temperature soldering guaranteed  
260/10sec/at terminals  
Glass passivated chip  
Ultrafast recovery time for high efficiency  
MECHANICAL DATA  
TerminalSolder plated, solderable per MIL-STD-750,  
Method 2026  
CaseJEDEC DO-214AB molded plastic body over  
passivated chip  
Polaritycolor band denotes cathode  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25, unless otherwise stated,  
for capacitive load, derate current by 20)  
SYMBOL  
ES3A  
ES3B  
ES3C  
ES3D  
ES3G  
ES3J  
units  
Vrrm  
Vrms  
Vdc  
50  
35  
50  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
100  
70  
150  
105  
150  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking Voltage  
100  
Maximum Average Forward Rectified  
at TL =100  
Peak Forward Surge Current 8.3ms single  
half sine- wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated forward current 3.0A  
If(av)  
Ifsm  
Vf  
3.0  
A
A
V
100.0  
0.90  
20  
1.25  
25  
1.7  
35  
10.0  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25℃  
Ta =100℃  
Ir  
µA  
500.0  
Trr  
Cj  
Maximum Reverse Recovery Time (Note1 )  
nS  
pF  
45.0  
12.0  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
Rth(jl)  
Tstg, Tj  
/W  
-55 to +150  
Storage and Operating Junction Temperature  
Note:  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area  
Rev.A2  
www.gulfsemi.com  

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