Datasheet > ES35P40-75CG2Y

ES35P40-75CG2Y

更新时间： 2024-11-06 03:34:51

品牌	Logo	应用领域
EXCELSEMI		闪存
页数	文件大小	规格书
35页	435K
描述
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface

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ES35P40-75CG2Y 数据手册

E S I

ADVANCED INFORMATION

Excel Semiconductor inc.

ES25P40

4Mbit CMOS 3.0 Volt Flash Memory

with 75Mhz SPI Bus Interface

ARCHITECTURAL ADVANTAGES

PERFORMANCE CHARACTERISTICS

• Single power supply operation

• Speed

- 2.7V -3.6V for read and program operations

- 75Mhz clock rate (maximum)

• Memory Architecture

- Eight sectors with 512 Kb each

• Power Saving Standby Mode

- Standby mode 50uA (max)

- Deep Power Down Mode 1uA (typical)

• Program

- Page program ( up to 256 bytes) in 1.5ms (typical)

- Program cycles are on a page by page basis

MEMORY PROTECTION FEATURES

• Erase

- 0.5s typical sector erase time

- 3s typical bulk erase time

• Memory Protection

- W# pin works in conjunction with Status Register Bits

to protect specified memory areas

- Status Register Block Protection Bits (BP2, BP1, BP0)

in status register configure parts of memory as read

only

• Endurance

- 100,000 cycles per sector (typical)

• Data Retention

- 20 years (typical)

SOFTWARE FEATURES

• Parameter Page

• SPI Bus Compatible Serial Interface

- 256 Byte page independent from main memory

for parameter storage

- Seperate from array, erase time < 20ms

• Device ID

- JEDEC standard two-byte electronic signature

- RES instruction one-byte electronic signature for

backward compatibility

- Manufacturer and device type ID

• Process Technology

- Manufactured on 0.18um process technology

• Package Option

- Industry Standard Pinouts

- 8-pin SO (208mil) package

- All Pb-Free devices are RoHS Compliant

Rev. 0D May 11 , 2006

ES25P40

12 3 4 5 6 7...35

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