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ES3A

更新时间: 2024-01-13 08:51:54
品牌 Logo 应用领域
威世 - VISHAY 二极管光电二极管超快速恢复二极管
页数 文件大小 规格书
2页 71K
描述
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

ES3A 技术参数

生命周期:Active包装说明:R-PDSO-C2
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:N应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:1000 V最大反向电流:10 µA
最大反向恢复时间:0.035 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

ES3A 数据手册

 浏览型号ES3A的Datasheet PDF文件第2页 
ES3A THRU ES3D  
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER  
Reverse Voltage - 50 to 200 Volts  
Forward Current - 3.0 Amperes  
DO-214AB  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
For surface mount applications  
Low profile package  
0.126 (3.20)  
0.114 (2.90)  
0.245 (6.22)  
0.220 (5.59)  
Built-in strain relief  
Ideal for automated placement  
Easy pick and place  
Superfast recovery time for high efficiency  
Glass passivated chip junction  
High temperature soldering:  
250°C/10 seconds at terminals  
0.280 (7.11)  
0.260 (6.60)  
0.012 (0.305)  
0.006 (0.152)  
0.103 (2.62)  
0.079 (2.06)  
MECHANICAL DATA  
Case: JEDEC DO-214AB molded plastic body over  
passivated chip  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
MAX.  
0.320 (8.13)  
0.305 (7.75)  
Polarity: Color band denotes cathode end  
Weight: 0.007 ounces, 0.21 gram  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
ES3A  
EA  
50  
ES3B  
EB  
ES3C  
EC  
ES3D  
ED  
UNITS  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
150  
105  
150  
200  
140  
200  
Volts  
Volts  
Volts  
Amps  
35  
Maximum DC blocking voltage  
50  
100  
Maximum average forward rectified current at TL=100°C  
I(AV)  
3.0  
100.0  
0.90  
Peak forward surge current  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method) at TL=100°C  
IFSM  
Amps  
Maximum instantaneous forward voltage at 3.0A  
VF  
IR  
trr  
Volts  
µA  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25°C  
TA=100°C  
10.0  
500.0  
Maximum reverse recovery time (NOTE 1)  
20.0  
ns  
Maximum reverse recovery time  
(NOTE 2)  
TJ=25°C  
TJ=100°C  
30.0  
50.0  
trr  
ns  
Maximum stored charge  
(NOTE 2)  
TJ=25°C  
TJ=100°C  
15.0  
35.0  
Qrr  
CJ  
nC  
pF  
Typical junction capacitance (NOTE 3)  
Typical thermal resistance (NOTE 4)  
45.0  
RΘJA  
RΘJL  
47.0  
12.0  
°C/W  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
NOTES:  
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
(2) trr and Qrr measured at: VR=30V, di/dt=50A/µs, IF=3.0A, and Irr=10% IR  
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts  
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas  
4/98  

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