Discr ete P OWER & Sign a l
Tech n ologies
ES3A - ES3D
Features
0.280 (7.112)
0.260 (6.604)
0.124 (3.150)
0.108 (2.743)
•
For surface mount applications.
0.245 (6.223)
0.220 (5.588)
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
2
1
0.320 (8.128)
0.305 (7.747)
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
0.103 (2.616)
0.079 (2.007)
• Superfast recovery times for
high efficiency.
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
3.0 Ampere Superfast Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TA = 75°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
3.0
A
if(surge)
100
A
PD
2.66
W
21.28
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient**
47
RθJA
RθJL
Tstg
TJ
°C/W
Thermal Resistance, Junction to Lead**
Storage Temperature Range
12
°C/W
°C
-50 to +150
-50 to +150
Operating Junction Temperature
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
3A
50
35
50
3B
100
70
3C
3D
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
150
105
150
200
140
200
V
V
V
100
DC Reverse Voltage
Maximum Reverse Current
@ rated VR T = 25 C
(Rated VR)
10
500
A
A
µ
µ
°
A
T = 100 C
A
°
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Forward Voltage @ 3.0 A
20
nS
0.90
45
V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
pF
ES3A-ES3D, Rev.
A
1999 Fairchild Semiconductor Corporation