Datasheet > ES2JAR3G

ES2JAR3G

更新时间： 2024-09-14 01:15:31

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	360K
描述
Surface Mount Super Fast Rectifiers

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中文翻译

获取价格

数据手册

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ES2JAR3G 数据手册

ES2AA thru ES2JA

Taiwan Semiconductor

CREAT BY ART

Surface Mount Super Fast Rectifiers

FEATURES

- Glass passivated junction chip

- Ideal for automated placement

- Low profile package

- Built-in strain rellef

- Super fast recovery time for high efficiency

- Moisture sensitivity level: level 1, per J-STD-020

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: DO-214AC (SMA)

DO-214AC (SMA)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - Green compound (halogen-free)

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity: Indicated by cathode band

Weight: 0.06 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

UNIT

2AA 2BA 2CA 2DA 2FA 2GA 2HA 2JA

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

V_F

I_R

Maximum instantaneous forward voltage (Note 1)

@ 2 A

0.95

1.3

1.7

Maximum reverse current @ rated VR T_J=25 ^oC

T_J=125 ^oC

350

μA

Maximum reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Trr

R_θJL

R_θJA

^OC/W

Typical thermal resistance

^OC

Operating junction temperature range

Storage temperature range

T_J

- 55 to +150

T_STG

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

Note 3: Measured at 1 MHz and Applied V_R=4.0 Volts

Document Number: DS_D1407006

Version: I14

12 3 4

中文翻译

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与ES2JAR3G相关器件

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