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ES2A-HE3/5BT

更新时间： 2024-10-30 20:37:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 82K
描述
DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

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中文翻译

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ES2A-HE3/5BT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AA
包装说明：ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.56
Base Number Matches：1

ES2A-HE3/5BT 数据手册

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ES2A thru ES2D  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DO-214AA (SMB)  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
trr  
50 V to 200 V  
50 A  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
20 ns  
VF  
0.90 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
150 °C  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ES2A  
EA  
ES2B  
EB  
ES2C  
EC  
ES2D  
ED  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
35  
Maximum DC blocking voltage  
VDC  
50  
100  
V
A
Maximum average forward rectified current at TL = 110 °C  
IF(AV)  
2.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
ES2A  
ES2B  
ES2C  
ES2D  
UNIT  
Maximuminstantaneousforward  
voltage  
(1)  
2.0 A  
VF  
0.90  
V
TA = 25 °C  
10  
Maximum DC reverse current at  
rated DC blocking voltage  
IR  
μA  
TA = 100 °C  
350  
Revision: 07-Feb-12  
Document Number: 88587  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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