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ES2AP PDF预览

ES2AP

更新时间: 2024-10-30 20:05:03
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 83K
描述
DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, HSMA, 2 PIN, Rectifier Diode

ES2AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:PLASTIC, HSMA, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.18
Base Number Matches:1

ES2AP 数据手册

 浏览型号ES2AP的Datasheet PDF文件第2页浏览型号ES2AP的Datasheet PDF文件第3页浏览型号ES2AP的Datasheet PDF文件第4页 
M C C  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES2A  
THRU  
ES2M  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
2 Amp Super Fast  
Recovery  
Silicon Rectifier  
50 to 1000 Volts  
Features  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Easy Pick And Place  
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
DO-214AC  
(HSMA) (High Profile)  
Operating Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
Cathode Band  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
J
ES2A  
ES2B  
ES2C  
ES2D  
ES2G  
ES2J  
ES2K  
ES2M  
ES2A  
ES2B  
ES2C  
ES2D  
ES2G  
ES2J  
ES2K  
ES2M  
35V  
70V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
100V  
105V  
140V  
280V  
420V  
560V  
700V  
150V  
200V  
400V  
600V  
800V  
1000V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
2.0A  
TJ = 75°C  
INCHES  
MIN  
.078  
.067  
.002  
---  
MM  
MIN  
DIM  
A
MAX  
.116  
.089  
.008  
.02  
MAX  
2.95  
2.25  
.20  
NOTE  
1.98  
1.70  
.05  
B
Peak Forward Surge  
Current  
IFSM  
50A  
8.3ms, half sine  
C
D
E
---  
.51  
.035  
.065  
.205  
.160  
.100  
.055  
.096  
.224  
.180  
.112  
.89  
1.40  
2.45  
5.69  
4.57  
2.84  
Maximum  
Instantaneous  
F
1.65  
5.21  
4.06  
2.57  
G
H
J
Forward Voltage  
ES2A-D  
.975V  
1.35V  
1.70V  
VF  
IR  
IFM = 2.0A;  
TJ = 25°C*  
ES2G-J  
ES2K-M  
SUGGESTED SOLDER  
PAD LAYOUT  
Maximum DC  
0.090”  
Reverse Current At  
Rated DC Blocking  
Voltage  
5µA  
TJ = 25°C  
150µA TJ = 100°C  
Maximum Reverse  
0.085”  
Recovery Time  
ES2A-D  
50ns  
60ns  
100ns  
Trr  
CJ  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Measured at  
1.0MHz, VR=4.0V  
ES2G-J  
ES2K-M  
0.070”  
Typical Junction  
Capacitance  
25pF  
*Pulse test: Pulse width 200 µsec, Duty cycle 2%  
www.mccsemi.com  
Revision: 4  
2006/05/18  
1 of 4  

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