ES1A
THRU
ES1M
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Features
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For Surface Mount Applications
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1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
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Operating Temperature: -50°C to +150°C
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Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 15°C/W Junction To Lead
DO-214AC
(SMAJ) (High Profile)
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
Maximum Maximum
H
Catalog
Number
RMS
Voltage
DC
Blocking
Voltage
50V
Cathode Band
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
35V
J
100V
150V
200V
400V
600V
800V
1000V
70V
100V
105V
140V
280V
420V
560V
700V
150V
200V
400V
600V
800V
1000V
A
C
E
D
B
F
Electrical Characteristics @ 25°C Unless Otherwise Specified
G
Average Forward
Current
IF(AV)
1.0A
TJ = 75°C
DIMENSIONS
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
DIM
A
B
C
D
E
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
MAX
2.95
2.25
.20
NOTE
Peak Forward Surge
Current
Maximum
IFSM
30A
8.3ms, half sine
.51
1.40
2.45
5.69
4.57
2.84
Instantaneous
F
G
H
J
Forward Voltage
ES1A-D
.975V
1.35V
1.60V
VF
IR
IFM = 1.0A;
TJ = 25°C*
ES1G-K
ES1M
Maximum DC
SUGGESTED SOLDER
PAD LAYOUT
Reverse Current At
Rated DC Blocking
Voltage
5mA
TJ = 25°C
0.090”
100mA TJ = 100°C
Maximum Reverse
Recovery Time
0.085”
ES1A-D
50ns
Trr
CJ
IF=0.5A, IR=1.0A,
Irr=0.25A
ES1G-K
60ns
ES1M
100ns
Typical Junction
Capacitance
45pF
Measured at
1.0MHz, VR=4.0V
0.070”
*Pulse test: Pulse width 200 msec, Duty cycle 2%
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05