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ES1AHE3_A/ PDF预览

ES1AHE3_A/

更新时间: 2024-11-01 21:10:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 78K
描述
SIGNAL DIODE

ES1AHE3_A/ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.55二极管类型:RECTIFIER DIODE
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):260端子面层:MATTE TIN
处于峰值回流温度下的最长时间:30Base Number Matches:1

ES1AHE3_A/ 数据手册

 浏览型号ES1AHE3_A/的Datasheet PDF文件第2页浏览型号ES1AHE3_A/的Datasheet PDF文件第3页浏览型号ES1AHE3_A/的Datasheet PDF文件第4页浏览型号ES1AHE3_A/的Datasheet PDF文件第5页 
ES1A thru ES1D  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
1.0 A  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IFSM  
trr  
50 V to 200 V  
30 A  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
15 ns  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
VF  
0.92 V  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive and telecommunication.  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ES1A  
EA  
ES1B  
EB  
ES1C  
EC  
ES1D  
ED  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
35  
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
50  
100  
IF(AV)  
1.0  
30  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Revision: 27-Feb-13  
Document Number: 88586  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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