Datasheet > ES1AL-28F-29

ES1AL-28F-29

更新时间： 2024-11-02 01:25:27

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	1249K
描述
SOD 123FL Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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ES1AL-28F-29 数据手册

ES1AL THRU ES1JL

HD FL 46

SOD123FL Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diode

Features

●I

50V-1000V

●High surge current capability

SOD-123FL

●VRRM

Glass passivated chip

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● ES1AL-ES1DL : ESL

●

ES1EL-ES1GL : ESM

● ES1JL : ESH

ES1

AL BL CL DL EL

50 100 150 200 300

Item

Symbol Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

400

600

MaximumRMS Voltage

35 70 105 140

210

280

420

RMS

Average Forward Current

60HZ Half-sine wave, Resistance

load, T_L=120℃

I_F(AV)

1.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

I_FSM

Ta =25℃

Junction Temperature

Storage Temperature

T_J

℃

-55~+150

T_STG

-55 ~ +150

Electrical Characteristics (T=25℃ Unless otherwise specified）

ES1

Item

Symbol

Unit

Test Condition

AL BL CL DL EL GL JL

Peak Forward Voltage

V_F

t_rr

I_F=1.0A

0.95

1.25

1.70

Maximum reverse recovery

time

I =0.5A,I =1.0A,I

_rr=0.25A

I_RRM1

T =25℃

Peak Reverse Current

μA

V =V

RRM

T =100℃

100

85¹⁾

R_θ

Between junction and ambient

Between junction and terminal

J-A

Thermal

℃/W

Resistance(Typical)

35¹⁾

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

igh Diode Semiconductor

12 3 4

中文翻译

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