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ES1AL-28F-29 PDF预览

ES1AL-28F-29

更新时间: 2024-11-02 01:25:27
品牌 Logo 应用领域
海德 - HDSEMI /
页数 文件大小 规格书
4页 1249K
描述
SOD 123FL Plastic-Encapsulate Diodes

ES1AL-28F-29 数据手册

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ES1AL THRU ES1JL  
HD FL 46  
SOD123FL Plastic-Encapsulate Diodes  
Super Fast Recovery Rectifier Diode  
Features  
I  
1A  
50V-1000V  
High surge current capability  
o
SOD-123FL  
VRRM  
Glass passivated chip  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
ES1AL-ES1DL : ESL  
ES1EL-ES1GL : ESM  
ES1JL : ESH  
ES1  
AL BL CL DL EL  
50 100 150 200 300  
Item  
Symbol Unit  
Test Conditions  
GL  
JL  
VRRM  
V
Repetitive Peak Reverse Voltage  
400  
600  
MaximumRMS Voltage  
35 70 105 140  
210  
280  
420  
V
RMS  
Average Forward Current  
60HZ Half-sine wave, Resistance  
load, TL=120  
IF(AV)  
A
A
1.0  
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave ,1 cycle ,  
IFSM  
25  
Ta =25℃  
Junction Temperature  
Storage Temperature  
TJ  
-55~+150  
TSTG  
-55 ~ +150  
Electrical Characteristics (T=25Unless otherwise specified  
ES1  
Item  
Symbol  
Unit  
V
Test Condition  
AL BL CL DL EL GL JL  
Peak Forward Voltage  
VF  
trr  
IF =1.0A  
0.95  
1.25  
1.70  
Maximum reverse recovery  
time  
ns  
I =0.5A,I =1.0A,I  
rr=0.25A  
35  
5
F
R
IRRM1  
I
T =25℃  
a
Peak Reverse Current  
μA  
V =V  
RM  
RRM  
T =100℃  
a
100  
851)  
Rθ  
Between junction and ambient  
Between junction and terminal  
J-A  
Thermal  
/W  
Resistance(Typical)  
351)  
Rθ  
J-L  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper  
pad areas  
1
H
igh Diode Semiconductor  

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