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ES1A-T

更新时间: 2024-11-18 20:54:11
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
8页 97K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

ES1A-T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMA, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.55配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:50 V最大反向恢复时间:0.035 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ES1A-T 数据手册

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ES1A  
THRU  
ES1J  
SURFACE MOUNT GLASS PASSIVATED  
SUPER FAST SILICON RECTIFIER  
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere  
FEATURES  
* Glass passivated device  
* Ideal for surface mounted applications  
* Low leakage current  
* Metallurgically bonded construction  
* Mounting position: Any  
* Weight: 0.057 gram  
DO-214AC  
MECHANICAL DATA  
* Epoxy : Device has UL flammability classification 94V-0  
0.067 (1.70 )  
0.051 (1.29 )  
0.110 ( 2.79 )  
0.086 ( 2.18 )  
0.180 ( 4.57 )  
0.160 ( 4.06 )  
0.012 ( 0.305 )  
0.006 ( 0.152 )  
0.091 ( 2.31 )  
0.067 ( 1.70 )  
0.059 ( 1.50 )  
0.035 ( 0.89 )  
0.008 ( 0.203 )  
0.004 ( 0.102 )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Resistive or inductive load.  
0.209 ( 5.31 )  
0.185 ( 4.70 )  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
RATINGS  
SYMBOL  
ES1A  
50  
ES1B  
100  
ES1C  
150  
ES1D  
200  
ES1E  
300  
ES1G  
ES1J  
UNITS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
Volts  
Volts  
Volts  
400  
280  
400  
600  
420  
600  
RRM  
105  
150  
V
35  
50  
70  
140  
200  
210  
300  
RMS  
100  
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified Current  
A
I
1.0  
30  
Amps  
Amps  
at T = 55oC  
O
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
I2T  
A2S  
Typical Current Square Time  
3.7  
85  
R
QJA  
0C/W  
Typical Thermal Resistance (Note 4)  
R
35  
QJL  
Typical Junction Capacitance (Note 2)  
C
15  
10  
pF  
0C  
J
Operating and Storage Temperature Range  
T , T  
-55 to + 150  
J
STG  
O
ELECTRICAL CHARACTERISTICS(@T  
A
=25 C unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
ES1A  
ES1B  
ES1C  
ES1D  
ES1E  
ES1G  
ES1J  
1.70  
Maximum Instantaneous Forward Voltage at 1.0A DC  
V
0.95  
1.25  
F
@T = 25oC  
A
5.0  
100  
35  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
MAmps  
I
R
@T = 100oC  
A
Maximum Reverse Recovery Time (Note 1)  
trr  
nSec  
2015-11  
REV: A  
NOTES : 1. Reverse Recovery Test Conditions: I  
F
= 0.5A, I  
R
= -1.0A, IRR = -0.25A  
2. Measured at 1 MH  
Z
and applied reverse voltage of 4.0 volts  
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.  
4. Thermal Resistance : Mounted on PCB.  

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