是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | QCCJ, LDCC44,.7SQ | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.11 | Is Samacsys: | N |
其他特性: | 64 MICROCELLS; 4 LABS; CONFIGURABLE I/O OPERATION WITH 2.5 OR 3.3 | 最大时钟频率: | 135.1 MHz |
系统内可编程: | YES | JESD-30 代码: | S-PQCC-J44 |
JESD-609代码: | e3 | JTAG BST: | YES |
长度: | 16.5862 mm | 湿度敏感等级: | 3 |
专用输入次数: | I/O 线路数量: | 36 | |
宏单元数: | 64 | 端子数量: | 44 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 0 DEDICATED INPUTS, 36 I/O | 输出函数: | MACROCELL |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装等效代码: | LDCC44,.7SQ | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 245 |
电源: | 2.5/3.3,3.3 V | 可编程逻辑类型: | EE PLD |
传播延迟: | 7.5 ns | 认证状态: | Not Qualified |
座面最大高度: | 4.57 mm | 子类别: | Programmable Logic Devices |
最大供电电压: | 3.6 V | 最小供电电压: | 3 V |
标称供电电压: | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 16.5862 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EPM7064AELI84-10 | ETC |
获取价格 |
Electrically-Erasable Complex PLD | |
EPM7064AELI84-4 | ETC |
获取价格 |
Electrically-Erasable Complex PLD | |
EPM7064AELI84-5 | ETC |
获取价格 |
Electrically-Erasable Complex PLD | |
EPM7064AELI84-7 | ETC |
获取价格 |
Electrically-Erasable Complex PLD | |
EPM7064AETC100-10 | ALTERA |
获取价格 |
High-performance 3.3-V EEPROM-based programmable logic devices (PLDs) built on second-gene | |
EPM7064AETC100-10N | ALTERA |
获取价格 |
EE PLD, 10ns, 64-Cell, CMOS, PQFP100, TQFP-100 | |
EPM7064AETC100-4 | ALTERA |
获取价格 |
EE PLD, 4.5ns, 64-Cell, CMOS, PQFP100, TQFP-100 | |
EPM7064AETC100-4N | INTEL |
获取价格 |
EE PLD, 4.5ns, 64-Cell, CMOS, PQFP100, TQFP-100 | |
EPM7064AETC100-5 | ETC |
获取价格 |
Electrically-Erasable Complex PLD | |
EPM7064AETC100-6 | ALTERA |
获取价格 |
EE PLD, 6ns, CMOS, PQFP100, TQFP-100 |