Datasheet > ENN6559

ENN6559

更新时间： 2024-02-03 21:20:54

品牌	Logo	应用领域
安森美 - ONSEMI		开关
页数	文件大小	规格书
4页	97K
描述
Ultrahigh-Speed Switching Applications

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数据手册

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ENN6559 数据手册

Ordering number : ENN6559

5LN01SP

N-Channel Silicon MOSFET

5LN01SP

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit : mm

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

2180

[5LN01SP]

2.2

4.0

0.4

0.5

0.4

1.3

1 : Source

2 : Drain

3 : Gate

Specifications

Absolute Maximum Ratings at Ta=25°C

3.0

3.8nom

SANYO : SPA

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

±10

0.1

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

0.4

0.25

150

°C

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

D GS

µA

(BR)DSS

=50V, V =0

DSS

GSS

=±8V, V =0

±10

(off)

=10V, I =100µA

0.4

1.3

Forward Transfer Admittance

Marking : YB

yfs



=10V, I =50mA

0.13

0.18



Continued on next page.

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 4 I www.onsemi.com

5LN01SP/D

12 3 4

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