5秒后页面跳转
ENN7367 PDF预览

ENN7367

更新时间: 2024-11-15 03:34:27
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
4页 36K
描述
Low-Frequency General-Purpose Amplifier Applications

ENN7367 数据手册

 浏览型号ENN7367的Datasheet PDF文件第2页浏览型号ENN7367的Datasheet PDF文件第3页浏览型号ENN7367的Datasheet PDF文件第4页 
Ordering number : ENN7367  
NPN Epitaxial Planar Silicon Transistor  
30C02SS  
Low-Frequency  
General-Purpose Amplifier Applications  
Applications  
Package Dimensions  
unit : mm  
2159A  
Low-frequency Amplifier, high-speed switching,  
small motor drive.  
[30C02SS]  
Features  
Top View  
1.4  
Side View  
Large current capacitance.  
0.1  
Low collector-to-emitter saturation voltage (resistance).  
0.25  
R
(sat) typ=330m[I =0.7A, I =35mA].  
CE  
3
C
B
Ultrasmall package facilitates miniaturization in end  
products.  
Small ON-resistance (Ron).  
1
0.45  
2
0.2  
Bottom View  
3
Side View  
1 : Base  
2 : Emitter  
3 : Collector  
2
1
SANYO : SSFP  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
CBO  
V
CEO  
V
EBO  
40  
30  
V
V
5
V
I
600  
1.2  
200  
150  
mA  
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
CP  
P
Mounted on a glass-epoxy board (20301.6mm)  
mW  
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
100  
100  
800  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
V
V
V
V
=30V, I =0  
nA  
nA  
CBO  
CB  
EB  
CE  
CE  
E
I
=4V, I =0  
C
EBO  
h
FE  
=2V, I =50mA  
300  
C
Gain-Bandwidth Product  
Marking : YM  
f
T
=10V, I =50mA  
540  
MHz  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O2203 TS IM No.7367-1/4  

与ENN7367相关器件

型号 品牌 获取价格 描述 数据表
ENN7385 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications
ENN7425 SANYO

获取价格

2-Input NAND Gate
ENN7426 SANYO

获取价格

2-Input NOR Gate
ENN7431 SANYO

获取价格

High-side Switch
ENN7435 SANYO

获取价格

UHF to C Band Low Noise Amplifier, Oscillation Applications
ENN7436 SANYO

获取价格

UHF to C Band Low Noise Amplifier, Oscillation Applications
ENN7483 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications
ENN7484 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications
ENN7500 SANYO

获取价格

DC / DC Converter Applications
ENN7504 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications