5秒后页面跳转
ENN7385 PDF预览

ENN7385

更新时间: 2024-10-01 22:28:55
品牌 Logo 应用领域
三洋 - SANYO 放大器
页数 文件大小 规格书
3页 29K
描述
Low-Frequency General-Purpose Amplifier Applications

ENN7385 数据手册

 浏览型号ENN7385的Datasheet PDF文件第2页浏览型号ENN7385的Datasheet PDF文件第3页 
Ordering number : ENN7385  
NPN Epitaxial Planar Silicon Composite Transistor  
CPH6517  
Low-Frequency  
General-Purpose Amplifier Applications  
Features  
Package Dimensions  
unit : mm  
2212  
Composite type with 2 transistors contained in the  
CPH package currently in use, improving the  
mounting efficiency greatly.  
The CPH6517 is formed with two chips, being  
equivalent to the 2SC4555, placed in one package.  
Low collector to emitter saturation voltage.  
Excellent in thermal equilibrium and pair capability.  
[CPH6517]  
0.15  
2.9  
5
6
1
4
0.05  
Electrical Connection  
2
3
C1 B2 E2  
0.95  
1 : Base 1  
TR2  
TR1  
2 : Emitter 1  
3 : Collector 2  
4 : Emitter 2  
5 : Base 2  
0.4  
(Top view)  
6 : Collector 1  
B1  
E1 C2  
SANYO : CPH6  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
20  
15  
V
5
V
I
500  
mA  
A
C
Collector Current(Pulse)  
Base Current  
I
1
100  
CP  
I
B
mA  
mW  
mW  
°C  
°C  
Collector Dissipation  
Total Dissipation  
P
1unit  
350  
C
P
500  
T
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
0.1  
0.1  
Collector Cutoff Current  
Emitter Cutoff Current  
I
V
V
=15V, I =0  
µA  
µA  
CBO  
CB  
E
I
=4V, I =0  
C
EBO  
EB  
Note : The specifications shown above are for each individual transistor.  
Continued on next page.  
Marking : 3B  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
22503 TS IM TA-100272 No.7385-1/3  

与ENN7385相关器件

型号 品牌 获取价格 描述 数据表
ENN7425 SANYO

获取价格

2-Input NAND Gate
ENN7426 SANYO

获取价格

2-Input NOR Gate
ENN7431 SANYO

获取价格

High-side Switch
ENN7435 SANYO

获取价格

UHF to C Band Low Noise Amplifier, Oscillation Applications
ENN7436 SANYO

获取价格

UHF to C Band Low Noise Amplifier, Oscillation Applications
ENN7483 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications
ENN7484 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications
ENN7500 SANYO

获取价格

DC / DC Converter Applications
ENN7504 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications
ENN7505 SANYO

获取价格

Low-Frequency General-Purpose Amplifier Applications