Datasheet > ENA1010A

ENA1010A

更新时间： 2024-09-16 12:51:15

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	113K
描述
General-Purpose Switching Device Applications

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中文翻译

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数据手册

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ENA1010A 数据手册

ECH8651R

Ordering number : ENA1010A

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

ECH8651R

Features

•

Low ON-resistance

Built-in gate protection resistor

•

2.5V drive

Best suited for LiB charging and discharging switch

•

Common-drain type

Halogen free compliance

•

Protection diode in

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±12

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

PW 10 s, duty cycle 1%

When mounted on ceramic substrate (900mm²0.8mm) 1unit

When mounted on ceramic substrate (900mm²0.8mm)

≤

1.4

1.5

150

°C

Channel Temperature

Storage Temperature

Tch

Tstg

--55 to +150

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: ECH8

7011A-003

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ECH8651R-TL-H

Top View

2.9

Packing Type : TL

Marking

0.15

0 to 0.02

Lot No.

Electrical Connection

0.65

0.3

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain

6 : Drain

7 : Drain

8 : Drain

Bottom View

SANYO : ECH8

http://semicon.sanyo.com/en/network

50912 TKIM/40908PE TIIM TC-00001313

No. A1010-1/7

12 3 4 5 6 7

中文翻译

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