EMX4 / UMX4N / IMX4
Transistors
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
zDimensions (Unit : mm)
zFeatures
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=1.5GHz)
3) Low output capacitance. (Cob=0.9pF)
EMX4
zEquivalent circuits
EMX4 / UMX4N
IMX4
(3) (2)
(1)
(4) (5)
(6)
ROHM
:
EMT6
Each lead has same dimensions
UMX4N
(4)
(5)
(6)
(3)
(2)
(1)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
ROHM
:
UMT6
Each lead has same dimensions
EIAJ
: SC-88
VCBO
VCEO
VEBO
30
20
3
V
IMX4
V
I
C
50
mA
EMX4 / UMX4N
IMX4
150(TOTAL)
300(TOTAL)
150
∗1
∗2
Collector power
dissipation
Pc
mW
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55 to +150
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
ROHM
EIAJ
:
SMT6
Each lead has same dimensions
:
SC-74
zPackage, marking, and packaging specifications
Type
EMX4
EMT6
X4
UMX4N
UMT6
X4
IMX4
SMT6
X4
Package
Marking
Code
T2R
TR
T108
3000
Basic ordering unit (pieces)
8000
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
Min.
30
20
3
Typ.
Max.
−
−
Conditions
Unit
V
BVCBO
−
−
I
C
=10µA
=1mA
BVCEO
BVEBO
V
I
I
C
−
−
−
−
V
E
=10µA
CB=15V
EB=2V
I
CBO
EBO
FE
CE(sat)
−
−
0.5
0.5
180
0.5
−
1.6
13
−
µA
µA
−
V
V
V
Emitter cutoff current
I
DC current transfer ratio
56
−
−
−
h
CE/I
/I =20mA/4mA
CE/I =10V/ −10mA, f=200MHz
CB/f=10V/1MHz, I =0A
C
=10V/10mA
V
IC B
Collector-emitter saturation voltage
Transition frequency
V
f
T
600
−
−
1500
0.95
6
MHz
pF
ps
dB
∗
V
V
E
Output capacitance
Cob
rbb' Cc
NF
E
Collector-base time constant
VCB
=10V, I
C
=10mA , f=31.8MHz
=2mA , f=200MHz , Rg=50Ω
−
Noise factor
4.5
V
CE=12V, I
C
∗Transition frequency of the device.
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
Rev.C
1/3