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EMX4_1 PDF预览

EMX4_1

更新时间: 2024-11-06 06:57:11
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 108K
描述
High transition frequency (dual transistors)

EMX4_1 数据手册

 浏览型号EMX4_1的Datasheet PDF文件第2页浏览型号EMX4_1的Datasheet PDF文件第3页浏览型号EMX4_1的Datasheet PDF文件第4页 
EMX4 / UMX4N / IMX4  
Transistors  
High transition frequency (dual transistors)  
EMX4 / UMX4N / IMX4  
zDimensions (Unit : mm)  
zFeatures  
1) Two 2SC3837K chips in a EMT or UMT or SMT package.  
2) High transition frequency. (fT=1.5GHz)  
3) Low output capacitance. (Cob=0.9pF)  
EMX4  
zEquivalent circuits  
EMX4 / UMX4N  
IMX4  
(3) (2)  
(1)  
(4) (5)  
(6)  
ROHM  
:
EMT6  
Each lead has same dimensions  
UMX4N  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
ROHM  
:
UMT6  
Each lead has same dimensions  
EIAJ  
: SC-88  
VCBO  
VCEO  
VEBO  
30  
20  
3
V
IMX4  
V
I
C
50  
mA  
EMX4 / UMX4N  
IMX4  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Collector power  
dissipation  
Pc  
mW  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
ROHM  
EIAJ  
:
SMT6  
Each lead has same dimensions  
:
SC-74  
zPackage, marking, and packaging specifications  
Type  
EMX4  
EMT6  
X4  
UMX4N  
UMT6  
X4  
IMX4  
SMT6  
X4  
Package  
Marking  
Code  
T2R  
TR  
T108  
3000  
Basic ordering unit (pieces)  
8000  
3000  
zElectrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
30  
20  
3
Typ.  
Max.  
Conditions  
Unit  
V
BVCBO  
I
C
=10µA  
=1mA  
BVCEO  
BVEBO  
V
I
I
C
V
E
=10µA  
CB=15V  
EB=2V  
I
CBO  
EBO  
FE  
CE(sat)  
0.5  
0.5  
180  
0.5  
1.6  
13  
µA  
µA  
V
V
V
Emitter cutoff current  
I
DC current transfer ratio  
56  
h
CE/I  
/I =20mA/4mA  
CE/I =10V/ 10mA, f=200MHz  
CB/f=10V/1MHz, I =0A  
C
=10V/10mA  
V
IC B  
Collector-emitter saturation voltage  
Transition frequency  
V
f
T
600  
1500  
0.95  
6
MHz  
pF  
ps  
dB  
V
V
E
Output capacitance  
Cob  
rbb' Cc  
NF  
E
Collector-base time constant  
VCB  
=10V, I  
C
=10mA , f=31.8MHz  
=2mA , f=200MHz , Rg=50Ω  
Noise factor  
4.5  
V
CE=12V, I  
C
Transition frequency of the device.  
This product might cause chip aging and breakdown under the large electrified environment.  
Please consider to design ESD protection circuit.  
Rev.C  
1/3  

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