Datasheet > EMP216MEAW

EMP216MEAW

更新时间： 2025-07-23 03:34:23

品牌	Logo	应用领域
EMLSI		/
页数	文件大小	规格书
14页	163K
描述
2Mx16 Pseudo Static RAM

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中文翻译

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数据手册

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EMP216MEAW 数据手册

Preliminary

EMP216MEAW Series

2Mx16 Pseudo Static RAM

RECOMMENDED DC OPERATING CONDITIONS

Parameter

Supply voltage

Symbol

Min

Typ

3.0

Max

3.3

Unit

V_CC

2.7

V_CCQ

V_SS, V_SSQ

V_IH

2.7

Ground

V_CCQ+ 0.2²⁾

0.2 * V_CCQ

Input high voltage

0.8 * V_CCQ

-0.2³⁾

Input low voltage

V_IL

1. T_A= -25 to 85^oC, otherwise specified

2. Overshoot: VCC +1.0 V in case of pulse width < 20ns

3. Undershoot: -1.0 V in case of pulse width < 20ns

4. Overshoot and undershoot are sampled, not 100% tested

CAPACITANCE (f =1MHz, T =25 C)

Item

Input capacitance

Symbol

Test Condition

Min

Max

Unit

C_IN

C_IO

V_IN=0V

Input/Ouput capacitance

V_IO=0V

1. Capacitance is sampled, not 100% tested

DC AND OPERATING CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

I_LI

=V to V

, V V

CC= CCmax

Input leakage current

-1

CCQ

CS#=V , ZZ#=V , OE#=V or WE#=V ,

CC= CCmax

I_LO

Output leakage current

-1

=V to V , V

CCQ

Cycle time=1µs, 100% duty, I =0mA,

I_CC1

CS#<0.2V, ZZ#=V , V <0.2V or V >V -0.2V

CCQ

Average operating current

Cycle time = Min, I =0mA, 100% duty,

I_CC2

CS#=V , ZZ#=V , V =V or V

0.2*V

Output low voltage

Output high voltage

V_OL

V_OH

= 0.5mA, V

CC= CCmin

CCQ

0.8*V

= -0.5mA, V

CC= CCmin

CCQ

CS#,ZZ#>V

-0.2V, Other inputs = 0 ~ V

CCQ

I_SB

(Typ. condition : V =3.0V @ 25 C)

Standby Current (CMOS)

100

(Max. condition : V =3.3V @ 85 C)

1. Maximum Icc specifications are tested with V_CC= V_CCmax.

Rev 0.0

1 2 3 456 7 8...14

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