Datasheet > EMP216MEAW

EMP216MEAW

更新时间： 2025-07-23 03:34:23

品牌	Logo	应用领域
EMLSI		/
页数	文件大小	规格书
14页	163K
描述
2Mx16 Pseudo Static RAM

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中文翻译

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数据手册

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EMP216MEAW 数据手册

Preliminary

EMP216MEAW Series

2Mx16 Pseudo Static RAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Voltage on Any Pin Relative to Vss

Voltage on Vcc supply relative to Vss

Power Dissipation

Symbol

V_IN, V_OUT

V_CC, V_CCQ

P_D

Ratings

Unit

-0.2 to V_CCQ+0.3V

-0.2²⁾to 3.6V

1.0

^oC

T_STG

Storage Temperature

-65 to 150

T_A

Operating Temperature

-25 to 85

1. Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. Undershoot at power-off : -1.0V in case of pulse width < 20ns

FUNCTIONAL DESCRIPTION

DQ_0~7

DQ_8~15

CS# ZZ# OE# WE# LB# UB#

Mode

Power

Stand by

Low Power Mode

Stand by

Active

High-Z

Data Out

High-Z

Data Out

Data In

High-Z

Data In

High-Z

Data Out

High-Z

Data In

Deselected

Output Disabled

Lower Byte Read

Upper Byte Read

Word Read

Active

Lower Byte Write

Upper Byte Write

Word Write

Active

Note: X means don’t care. (Must be low or high state)

Rev 0.0

1 2 345 6 7...14

中文翻译

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