Datasheet > EMP111

EMP111

更新时间： 2022-12-18 00:37:09

品牌	Logo	应用领域
EXCELICS		放大器功率放大器
页数	文件大小	规格书
3页	203K
描述
7.0 - 9.0 GHz Power Amplifier MMIC

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EMP111 数据手册

EMP111

UPDATED 10/05/2004

7.0 – 9.0 GHz Power Amplifier MMIC

FEATURES

•

7.0 – 9.0 GHz Operating Frequency Range

27.0dBm Output Power at 1dB

Compression

•

18.0 dB Typical Small Signal Gain

-40dBc OIMD3 @Each Tone Pout 17 dBm

Dimension: 1130um X 2250um

Thickness: 85um + 13um

APPLICATIONS

•

Point-to-point and point-to-multipoint radio

Military Radar Systems

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS

(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified)

SYMBOL

PARAMETER/TEST CONDITIONS

Operating Frequency Range

MIN

TYP

MAX

UNITS

7.0

9.0

GHz

Output Power at 1dB Gain Compression

Small Signal Gain

P1dB

Gss

26.0

15.0

27.0

18.0

dBm

Output 3^rdOrder Intermodulation Distortion

@∆f=10MHz, Each Tone Pout 17dBm,

7V, 60%+10%Idss

OIMD3

-41

-38

-8

dBc

Input RL

Input Return Loss

-12

-6

Output RL Output Return Loss

Idss

Vds

Saturated Drain Current

Drain to Source Voltage

Noise Figure @8GHz

Vds =3V, V_GS=0V

475

- 35

620

750

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

^oC/W

Operating Base Plate Temperature

+ 85

ºC

MAXIMUM RATINGS AT 25°C^1,2

SYMBOL

Vds

V_GS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Drain Current

ABSOLUTE

12V

CONTINUOUS

8 V

-8V

- 4 V

Ids

Idss

650mA

I_GSF

Forward Gate Current

Input Power

57mA

9.5 mA

P_IN

24dBm

175°C

-65/175°C

6.2W

@ 3dB compression

150°C

T_CH

Channel Temperature

Storage Temperature

Total Power Dissipation

T_STG

P_T

-65/150°C

5.2W

1. Operating the device beyond any of the above rating may result in permanent damage.

2. Bias conditions must also satisfy the following equation Vds*Ids < (T_CH–Tb)/R_TH

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 3

Revised October 2004

12 3

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