EMP109-P1
ISSUED DATE: 07-01-04
5.0 – 6.5 GHz Power Amplifier MMIC
FEATURES
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5.0 – 6.5 GHz Operating Frequency Range
26.5dBm Output Power at 1dB Compression
20.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 16.5dBm
APPLICATIONS
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Point-to-point and point-to-multipoint radio
Military Radar Systems
Optional Packaging solutions are available
contact the Excelics sales team for details.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=400mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
Operating Frequency Range
5.0
6.5
GHz
dBm
dB
P1dB
Gss
Output Power at 1dB Gain Compression
25.0
17.0
26.5
20.0
Small Signal Gain
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 16.5dBm
OIMD3
-40
dBc
Input RL
Input Return Loss
-12
-6
dB
dB
Output RL Output Return Loss
Idss
VDD
Rth
Tb
Saturate Drain Current
Power Supply Voltage
V
DS =3V, VGS =0V
496
- 35
620
7
744
8
mA
V
oC/W
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
15
+ 85
ºC
SYMBOL
VDS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
VALUE
8 V
- 4 V
VGS
IDD
Idss
IGSF
Forward Gate Current
Input Power
9 mA
PIN
@ 3dB compression
150°C
TCH
Channel Temperature
Storage Temperature
Total Power Dissipation
TSTG
-65/150°C
7.6W
PT
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised July 2004