Datasheet > EMB06K03HP

EMB06K03HP

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
10页	917K
描述
EDFN5X6

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EMB06K03HP 数据手册

EMB06K03HP

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N-CH-Q1 N-CH-Q2

BVDSS

RDSON (MAX.)

30V

9.5mΩ

11A

6.5mΩ

14A

N-Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate-Source Voltage

V_GS

I_D

±20

Continuous Drain Current

T_A= 25 °C

T_A= 100 °C

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_A= 25 °C

E_AS

E_AR

P_D

51.2

25.6

2.0

72.2

36.1

2.3

Repetitive Avalanche Energy²

Power Dissipation

°C

T_A= 100 °C

0.8

0.9

Operating Junction & Storage Temperature Range

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

T_j, T_stg

-55 to 150

SYMBOL

R_JC

TYPICAL

MAXIMUM

2.6

UNIT

Junction-to-Case

1.8

°C / W

Junction-to-Ambient

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

R_JAwhen mounted on a 1 in²pad of 2 oz copper.

2019/02/20

p.1

12 3 4 5 6 7...10

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