Datasheet > EMA303D-2

EMA303D-2

更新时间： 2024-09-15 06:57:03

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	155K
描述
19.5 - 24 GHz Medium Power MMIC

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Excelics

EMA303D-2

DATA SHEET

19.5 - 24 GHz Medium Power MMIC

Release Date: March 7, 2003

FEATURES

19.5 -24 GHz BANDWIDTH

+22 dBm OUTPUT POWER @1dB Gain Compression

22 dB TYPICAL SMALL SIGNAL GAIN

DUAL BIAS SUPPLY

0.3 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

Chip Size 1060 x 2500 microns

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

ELECTRICAL CHARACTERISTICS¹(T_a= 25 ^OC)

SYMBOL

PARAMETERS/TEST CONDITIONS

Operating Frequency Range

MIN TYP MAX UNIT

19.5

GHz

Ouput Power at 1dB Gain Compression

@ Vdd=8V ; Id= 0.5 Idss

P_1dB

21.5

19.5

dBm

@ Vdd=6V ; Id= 0.5 Idss

Small Signal Gain @ Vdd=6V ; Id= 0.5 Idss

Gss

DGss

Small Signal Gain Flatness

Noise Figure @ f=18GHz, Vdd=3.5V, Id=140mA

Input Return Loss

± 1.5

Input RL

Output RL

Idd

Output Return Loss

Power Supply Current

140

Power Supply Voltage

Vdd

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

Vgs

Ids

-8V

-3V

Idss

215mA

8.5mA

Forward Gate Current

Input Power

50 mA

15dBm

175^oC

Igf

@3dB Compression

150^oC

-65/150^oC

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

-65/175^oC

1 W

0.85 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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