LED - Chip
ELС-460-31-2
26.05.2008
Technology
rev. 02
Type
Electrodes
Radiation
Blue
InGaN/Al2O3
Both on top side
typ. dimensions (µm)
typ. thickness
100 (±10) µm
p and n contact
gold alloy
backside metalization
gold alloy
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
VF
Min
Typ
Max
Unit
conditions
IF = 20 mA
IF = 350 mA
IR = 10 µA
Forward voltage
2.7
3.5
3.1
V
V
Forward voltage2
Reverse voltage
VF
VR
Φe
Φe
Ιv
5V
14
V
Radiant power1
IF = 20 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 20 mA
IF = 20 mA
18
250
2500
455
465
25
mW
mW
mcd
nm
nm
nm
ns
Radiant power1
200
1500
445
455
Luminous intensity1
Peak wavelength
Dominant wavelength
Spectral bandwidth at 50%
Switching time
λP
465
475
λD
∆λ0.5
tr, tf
50
1Measured on bare chip with EPIGAP equipment
Labeling
VF(typ) [V]
Lot N°
ΙV(typ) [mcd]
Quantity
Type
ELС-460-31-2
Packing: Chips on adhesive film with wire-bond side on top
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545