Datasheet > ELC-595-29-50

ELC-595-29-50

更新时间： 2024-12-01 06:56:31

品牌	Logo	应用领域
EPIGAP		/
页数	文件大小	规格书
1页	82K
描述
LED - Chip

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数据手册

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ELC-595-29-50 数据手册

LED - Chip

ELC-595-29-50

Preliminary

10.04.2007

Technology

rev. 02/06

Type

Electrodes

Radiation

Yellow

Point Source

AlInGaP/GaAs

N (cathode) up

typ. dimensions (µm)

Ø 150

typ. thickness

170 (±20) µm

cathode

gold alloy, 1.5 µm

anode

245

180

gold alloy, 0.5 µm

450 ^{+ 20}

-10

PS-03

Maximum Ratings

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

I_F

Min

Typ

Max

Unit

conditions

Forward current (DC)

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

conditions

Parameter

Symbol

V_F

Typ

2.2

Max

2.4

Unit

I_F= 5 mA

I_R= 10 µA

I_F= 5 mA

Forward voltage

V_R

Reverse voltage

Φ_e

Radiant power*

150

240

µW

mcd

I_V

Luminous intensity*

Peak wavelength

Spectral bandwidth at 50%

Switching time

λ_p

595

∆λ_0.5

t_r, t_f

*Measured on bare chip on TO-18 header with EPIGAP equipment

Labeling

I_V(typ) [mcd] V_F(typ) [V]

Lot N°

Quantity

Type

ELC-595-29-50

Packing: Chips on adhesive film with wire-bond side on top

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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