LED - Chip
ELС-490-37
Preliminary
10.04.2007
Technology
InGaN/Al2O3
rev. 01/07
Type
Electrodes
Radiation
Green
Standard
Both on top side
typ. dimensions in µm (±20 µm)
380 µm
typ. thickness
90 (±20) µm
P
Ø 90µm
front side metalization
Au-alloy, 0.5 µm
100 µm
backside metalization
Al-alloy, 1.5 µm
N
350 µm
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
IF
Value
20
Unit
mA
mA
°C
Forward current (DC)
(tP ≤ 50 µs, tP /T = 1/2)
IFM
Peak forward current
100
Tamb
Tstg
Operating temperature range
Storage temperature range
-40 to +85
-40 to +100
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
VF
Min
Typ
3.3
Max
3.5
Unit
V
conditions
IF = 20 mA
Forward voltage
Reverse voltage
IF = 1 µA
VR
5
V
Luminous intensity1
Dominant wavelength
Spectral bandwidth at 50%
Switching time
IF = 20 mA
IF = 20 mA
IF = 20 mA
IF = 20 mA
Ιv
220
480
280
490
25
mcd
nm
nm
ns
λD
500
∆λ0.5
tr, tf
20
1Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
VF(typ) [V]
Lot N°
Ιv(typ) [mcd]
Quantity
Type
ELС-490-37
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545