Datasheet > ELC-560-10

ELC-560-10

更新时间： 2024-12-01 06:56:31

品牌	Logo	应用领域
EPIGAP		/
页数	文件大小	规格书
1页	95K
描述
LED - Chip

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ELC-560-10 数据手册

LED - Chip

ELС-560-10

07.01.2008

Technology

rev. 03

Type

Electrodes

Radiation

Green

Standard

GaP/GaP

P (anode) up

typ. dimensions (µm)

235

117

typ. thickness

270 (±20) µm

cathode

gold alloy, 1.5 µm

anode

gold alloy, 0.5 µm

structured, 25% covered

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

V_F

Min

Typ

2.1

Max

2.4

Unit

conditions

I_F= 20 mA

I_R= 10 µA

I_F= 20 mA

Forward voltage

Reverse voltage

V_R

Radiant power¹

Radiant power²

Luminous intensity¹

Luminous intensity²

Peak wavelength

Φ_e

µW

mcd

Φ_e

I_V

1.2

2.4

560

563

λ_P

550

570

λ_D

Dominant wavelength

∆λ_0.5

Spectral bandwidth at 50%

¹Measured on bare chip on TO-18 header with EPIGAP equipment

²Measured on epoxy covered chip on TO-18 header with EPIGAP equipment

Labeling

V_F(typ) [V]

Lot N°

Ι_V(typ) [mcd]

Quantity

Type

ELС-560-10

Packing: Chips on adhesive film with wire-bond side on top

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 1

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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