Datasheet > ELC-1060-17

ELC-1060-17

更新时间： 2024-09-10 06:56:31

品牌	Logo	应用领域
EPIGAP		/
页数	文件大小	规格书
1页	89K
描述
LED - Chip

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数据手册

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ELC-1060-17 数据手册

LED - Chip

ELC-1060-17

Preliminary

10.04.2007

rev. 02/06

Type

Technology

InGaAs/InP

Electrodes

Radiation

Infrared

MQW

P (anode) up

360

300

typ. dimensions (µm)

typ. thickness

260 µm

anode

gold alloy, 1.5 µm

cathode

gold alloy, 0.5 µm

LED-11

Maximum Ratings

Tamb = 25°C, unless otherwise specified

Test

Parameter

Symbol

Typ

Max

Unit

Min

conditions

I_F

Forward current (DC)

Peak forward current

100

200

_P≤ 50 µs,

t_P/T = 1/2

I_FM

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

conditions

I_F= 20 mA

Parameter

Symbol

V_F

Min

Max

Unit

Forward voltage

Reverse voltage

1.05

1.20

1.3

1.4

V_F

V_R

I_F= 100 mA

I_R= 100 µA

I_F= 20 mA

I_F= 100 mA

Radiant power¹

Φ_e

0.4

2.0

0.6

2.8

5.5

1060

Radiant power¹

Radiant power²

Φ_e

λ_p

Peak wavelength

Spectral bandwidth at 50%

Switching time

1040

1080

∆λ_0.5

t_r, t_f

¹Measured on bare chip on TO-18 header with EPIGAP equipment

²Measured on epoxy covered chip on TO-18 header withEPIGAP equipment

Labeling

Lot N°

Φ_e(typ) [mW]

V_F(typ) [V]

Quantity

Type

ELС-1060-17

Packing: Chips on adhesive film with wire-bond side on top

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 1

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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