EGP20F

更新时间： 2024-11-26 22:40:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	64K
描述
GLASS PASSIVATED FAST EFFICIENT RECTIFIER

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中文翻译

获取价格

技术参数
数据手册

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EGP20F 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.69
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.25 V	JESD-609代码：	e0
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	2 A	最大重复峰值反向电压：	300 V
最大反向恢复时间：	0.05 µs	子类别：	Rectifier Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)

EGP20F 数据手册

EGP20A THRU EGP20G

GLASS PASSIVATED FAST EFFICIENT RECTIFIER

Reverse Voltage - 50 to 400 Volts

Forward Current - 2.0 Amperes

FEATURES

♦ Plastic package has Underwriters Laboratories

Flammability Classification 94V-0

♦ Glass passivated cavity-free junction

♦ Superfast recovery time for high efficiency

♦ Low forward voltage, high current capability

♦ Low leakage current

DO-204AC

0.034 (0.86)

0.028 (0.71)

1.0

(25.4)

MIN.

DIA.

♦ High surge current capability

♦ High temperature

metallurgically bonded construction

♦ High temperature soldering guaranteed:

300°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.300 (7.6)

0.230 (5.8)

0.140 (3.6)

0.104 (2.6)

MECHANICAL DATA

Case: JEDEC DO-204AC molded plastic over solid glass

body

DIA.

1.0

(25.4)

MIN.

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight: 0.015 ounce, 0.4 gram

Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

EGP

20A

EGP

20B

EGP

20C

EGP

20D

EGP

20F

EGP

20G

SYMBOLS

V_RRM

V_RMS

V_DC

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

300

210

300

400 Volts

280 Volts

400 Volts

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55°C

I_(AV)

2.0

Amps

Peak forward surge current,

8.3 ms single half sine-wave superimposed

on rated load

I_FSM

75.0

Amps

Maximum instantaneous forward voltage at 2.0A

V_F

I_R

0.95

70.0

1.25

Volts

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=125°C

5.0

100.0

µA

Maximum reverse recovery time _{(NOTE 1}

Typical junction capacitance _{(NOTE 2)}

Typical thermal resistance _{(NOTE 3)}

)

t_rr

50.0

C_J

45.0

R_ΘJA

R_ΘJL

40.0

15.0

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-65 to +150

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, Irr=0.25A

(2) Measured at 1.0 MH_Zand applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted

4/98

中文翻译

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与EGP20F相关器件

型号	品牌	获取价格	描述	数据表
EGP20F/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/60	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/68	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/70	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/71	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

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