Datasheet > EGP20F

EGP20F

更新时间： 2024-11-28 14:52:55

品牌	Logo	应用领域
鲁光 - LGE		整流二极管高效整流二极管
页数	文件大小	规格书
2页	1974K
描述
高效整流二极管

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中文翻译

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技术参数
数据手册

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EGP20F 技术参数

Case Style：	DO-15	Maximum average forward rectified current：	2
Maximum recurrent peak reverse voltage：	300	Peak forward surge current：	75
Maximum instantaneous forward voltage：	1.3	Maximum reverse current：	5.0
TRR(nS)：	50	class：	Diodes

EGP20F 数据手册

EGP20A-EGP20K

High Efficiency Rectifiers

VOLTAGE RANGE: 50 --- 800 V

CURRENT: 2.0 A

Features

DO - 15

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easilycleaned with Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case:JEDEC DO--15,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-750,Method 2026

Dimensions in millimeters

Polarity: Color band denotes cathode

Weight: 0.014 ounces,0.39 grams

Mounting position: Any

MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

EGP EGP EGP EGP EGP EGP EGP EGP

20A 20B 20C 20D 20F 20G 20J 20K

UNITS

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

300 400

210 280

300 400

600

420

600

800

560

800

V_RRM

RMS

Maximum DC blocking voltage

100

V_DC

Maximum average forw ard rectified current

2.0

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

I_FSM

@T_J=125

Maximum instantaneous forw ard voltage

@ 2.0 A

0.95

1.25

1.7

V_F

I_R

Maximum reverse current

@T_A=25

5.0

at rated DC blocking voltage @T_A=125

100

Maximum reverse recovery

Typical junction capacitance

(Note1)

(Note2)

t_rr

C_J

R_θ

Typical thermal resistance

(Note3)

(Note 4)

/ W

R_θ

Operating junction temperature range

- 55 ---- + 150

T_J

Storage temperature range

T_STG

NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

3.Thermal resistance f rom junction to ambient.

4.Thermal resistance from junction to lead.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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与EGP20F相关器件

型号	品牌	获取价格	描述	数据表
EGP20F/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/4H	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/53	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/54	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/56	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/58	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/60	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/68	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/70	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2
EGP20F/71	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 300V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2

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