EDI8L32256C
256Kx32 SRAM Module
256Kx32, 5V Static Ram
Features
The EDI8L32256C is a high speed, 5V, 8 megabit SRAM.
The device is available with access times of 15, 17, 20 and
25ns, allowing the creation of a no wait state DSP memory
solution.
The device can be configured as a 256Kx32 and used to
create a single chip external data memory solution for
Texas Instruments' TMS320C30/31, TMS 320C32 or
TMS320C4x, Motorola's DSP96002 and Analog Device's
SHARCTM DSP.
256Kx32 bit CMOS Static
DSP Memory Solution
• Texas Instruments TMS320C3x, TMS320C4x
• Analog SHARCTM DSP
• Motorola DSP96002
Random Access Memory Array
• Fast Access Times: 15, 17, 20 and 25ns
• Individual Byte Enables
Alternatively the device's chip enables can be used to
configure it as a 512Kx16. A 512Kx48 program memory
array for Analog's SHARCTM DSP is created using three
devices. If this memory is too deep, two 256Kx24s
(EDI8L24256C) can be used to create a 256Kx48 array or
two 128Kx24s (EDI8L24128C) can be used to create a
128Kx48 array.
The device provides a 32% space savings when compared
to two monolithic 256Kx16, 44 pin SOJs.
The device provides a memory upgrade of the
EDI8L32128C (128Kx32) and the EDI8L3265C (64Kx32).
For more memory the device can be upgraded to the
EDI8L32512C (512Kx32).
• User Configurable Organization
with Minimal Additional Logic
• Master Output Enable and Write Control
• TTL Compatible Inputs and Outputs
• Fully Static, No Clocks
Surface Mount Package
• 68 Lead PLCC, No. 99, JEDEC MO-47AE
• Small Footprint, 0.990 Sq. In.
• Multiple Ground Pins for Maximum
Noise Immunity
Single +5V (±5%) Supply Operation
NOTE: Solder Reflow temperature should not exceed 260°C for 10 seconds.
Pin Configurations and Block Diagram
Pin Names
AØ-A17
EØ-E1
BSØ-BS3
W
Address Inputs
Chip Enables (One per Word)
Byte Selects (One per Byte)
Master Write Enable
Master Output Enable
Common Data Input/Output
Power(+5V±5%)
60 DQ14
DQ17 10
59 DQ13
DQ18 11
58 DQ12
DQ19 12
57 VSS
VSS 13
G
56 DQ11
DQ20 14
55 DQ10
DQ21 15
54 DQ9
DQ22 16
53 DQ8
DQ23 17
52 VCC
VCC 18
DQØ-DQ31
VCC
VSS
NC
Ground
No Connection
51 DQ7
DQ24 19
50 DQ6
DQ25 20
49 DQ5
DQ26 21
48 DQ4
DQ27 22
47 VSS
VSS 23
46 DQ3
DQ28 24
45 DQ2
DQ29 25
44 DQ1
DQ30 26
AØ-A17
G
18
W
EØ
E1
BSØ
BS1
BS2
BS3
256Kx32
Memory
DQØ-DQ7
Array
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
Note: For memory upgrade information refer to page 8, Figure 8 "EDI MCM-L
upgradepath".
Electronic Designs Incorporated
• One Research Drive • Westborough, MA 01581USA • 508-366-5151 • FAX 508-836-4850 •
http://www.electronic-designs.com
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EDI8L32256C Rev. 4 3/98 ECO#9662