Datasheet > EDI8L32512C-AC

EDI8L32512C-AC

更新时间： 2024-01-27 13:09:32

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	140K
描述
TMS320C3000. TMS320C4000 Families

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中文翻译

获取价格

数据手册

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EDI8L32512C-AC 数据手册

EDI8L32512C

White Electronic Designs

512K x 32 CMOS High Speed Static RAM

FEATURES

DESCRIPTION

The EDI8L32512C is a high speed, 5V, 16 megabit

SRAMꢀ The device is available with access times of

12, 15, 17 and 20ns allowing the creation of a no wait

state DSP memory solutionꢀ The high speed, 5V

supply voltage and control lines make the device ideal

for creating floating point DSP memory solutionsꢀ

n DSP Memory Solution

Motorola DSP96002

Analog SHARC DSP

Texas Instruments TMS320C3x, TMS320C4x

n Random Access Memory Array

Fast Access Times: 12*, 15, 17, and 20ns

TTL Compatible Inputs and Outputs

Fully Static, No Clocks

The device can be configured as a 512K x 32 and used

to create a single chip external data memory solution for

TI's TMS320C30/C31 (Figure 8), TMS320C32 (Figure 9)

or TMS320C4x (Figure 10), Motorola's DSP96002 and

Analog's SHARC DSP (Figure 11)ꢀ Alternatively, the

device's chip enables can be used to configure it as a 1M

x 16ꢀ A 1M x 48 program memory array for Analog's

SHARC DSP is created using three devices (Figure 12)ꢀ

Ifthismemoryistoodeep,two512Kx24s(EDI8L24512C)

can be used to create a 512K x 48 array or two 128K x 24s

(EDI8L24128C) can be used to create a 128K x 48 arrayꢀ

n Surface Mount Package

68 Lead PLCC, Noꢀ 99 JEDEC M0-47AE

Small Footprint, 0ꢀ990 Sqꢀ Inꢀ

Multiple Ground Pins for Maximum

Noise Immunity

n Single +5V (±5%) Supply Operation

* Advance Informationꢀ

The device provides a 56% space savings when

compared to four 512K x 8, 36 pin SOJsꢀ In addition

the EDI8L32512C has only a 10pF load on the data

lines vsꢀ 32pF for four plastic SOJsꢀ

The device provides a memory upgrade of the

EDI8L32256C (256K x 32) or the EDI8L32128C (128K x

32)ꢀ For additional upgrade information see Figure 13ꢀ

Note: Solder Reflow Temperature should not exceed 230°C for 10 secondsꢀ

PIN CONFIGURATIONSAND BLOCK DIAGRAM

FIGꢀ1

BYTE CONTROL

TABLE

PIN NAMES

A0-18

E0-3

Address Inputs

Chip

Byte

Chip Enables (One per Byte)

Master Write Enable

Master Output Enable

Enable Control

60 DQ14

59 DQ13

58 DQ12

DQ17 10

DQ18 11

DQ19 12

DQ0-7

VSS

DQ8-15

DQ16-23

DQ24-31

SS 13

DQ0-31 Common Data Input/Output

56 DQ11

55 DQ10

54 DQ9

53 DQ8

52 V^CC

51 DQ7

50 DQ6

49 DQ5

48 DQ4

DQ20 14

DQ21 15

DQ22 16

DQ23 17

VCC

VSS

Power (+5V ±5%)

Ground

CC 18

DQ24 19

DQ25 20

DQ26 21

DQ27 22

No Connection

VSS

SS 23

46 DQ3

45 DQ2

44 DQ1

DQ28 24

DQ29 25

DQ30 26

A0-18

512K x 32

Memory

Array

DQ0-7

DQ8-15

DQ16-23

DQ24-31

Note: For memory upgrade information, refer to Page 8, Figure 13

"EDI MCM-L Upgrade Pathꢀ"

August 2000 Revꢀ 7

ECO#13097

White Electronic Designs Corporation (508) 485-4000 wwwꢀwhiteedcꢀcom

12 3 4 5 6 7 8

中文翻译

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与EDI8L32512C-AC相关器件

型号	品牌	获取价格	描述	数据表
EDI8L32512V	WEDC	获取价格	512Kx32 SRAM Module.3.3V
EDI8L32512V10AC	WEDC	获取价格	SRAM Module, 512KX32, 10ns, CMOS, PQCC68, 0.990 X 0.990 INCH, PLASTIC, LCC-68
EDI8L32512V12AC	MERCURY	获取价格	SRAM Module, 512KX32, 12ns, CMOS, PQCC68, PLASTIC, MO-47AE, LCC-68
EDI8L32512V12AC	WEDC	获取价格	512Kx32 SRAM Module.3.3V
EDI8L32512V15AC	WEDC	获取价格	512Kx32 SRAM Module.3.3V
EDI8L32512V15AC	MERCURY	获取价格	SRAM Module, 512KX32, 15ns, CMOS, PQCC68, PLASTIC, MO-47AE, LCC-68
EDI8L32512V15AI	WEDC	获取价格	512Kx32 SRAM Module.3.3V
EDI8L32512V15AI	MERCURY	获取价格	SRAM Module, 512KX32, 15ns, CMOS, PQCC68, PLASTIC, MO-47AE, LCC-68
EDI8L32512V17AC	WEDC	获取价格	512Kx32 SRAM Module.3.3V
EDI8L32512V17AC	MERCURY	获取价格	SRAM Module, 512KX32, 17ns, CMOS, PQCC68, PLASTIC, MO-47AE, LCC-68

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