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EDI8L21664V10BC PDF预览

EDI8L21664V10BC

更新时间: 2024-11-16 20:23:55
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
6页 454K
描述
SRAM Module, 128KX16, 10ns, CMOS, PBGA74, 15 X 15 MM, MO-151, BGA-74

EDI8L21664V10BC 数据手册

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EDI8L21664V  
TMS320C54x External SRAM Memory Solution  
FEATURES  
DESCRIPTION  
n DSP Memory Solution  
The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed  
with two 64Kx16 die mounted on a multi-layer laminate substrate.  
The device is packaged in a 74 lead, 15mm by 15mm, BGA.  
Ÿ Texas Instruments TMS320C54x  
n 3.3V Operating Supply Voltage  
Operating with a 3.3V power supply and with access times as fast  
as 10ns, the device allows the user to develop a fast external  
memory for Texas Instuments' TMS320C54x DSP.  
n Access Times of 10, 12 and 15ns  
n Single Write Control and Output Enable Lines  
n One Chip Enable Line per Memory Bank  
n 50% Space Savings vs. Monolithic TSOPs  
n Upgrade Path Available in Same Footprint  
n Multiple VCC and VSS Pins  
The device consists of two separate banks of 64Kx16 of memory.  
Each bank has a separate Chip Enable pin and higher order  
address select pin. Bank 'A' is controlled using CE1\ and A15A.  
Bank 'B' is controlled using CE2\ and A15B. The two banks have  
common I/Os (DQ0-15) and control lines (WE\ and G\).  
n Reduced Inductance and Capacitance  
n 74 pin BGA, JEDEC MO-151  
PIN CONFIGURATION  
1
2
3
4
5
6
7
8
9
10  
11  
A
B
C
D
E
F
G
H
J
VSS VCC VCC DQ15 DQ14 VCC DQ13 DQ11 DQ9 DQ8 N/C A  
VSS VCC VCC VSS VSS VCC DQ12 DQ10 DQ4 VCC VCC B  
VSS VSS  
VSS VSS  
VSS VSS  
A15A CE1\  
VCC  
VSS VCC C  
VSS VCC D  
VSS VCC E  
DQ3 DQ7 F  
DQ5 DQ0 G  
DQ6 DQ1 H  
N/C  
WE\  
VSS CE2\  
VSS A14  
VSS A12  
A15B A13  
VCC  
VSS  
VSS  
DQ2 N\C  
J
K
L
K
L
VCC A10  
VCC A11  
A8  
A9  
A6  
A7  
A4  
VSS A5  
A2  
A0  
A3  
G\  
A1  
1
2
3
4
5
6
7
8
9
10  
11  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
Dec. 2002 Rev. 1  
ECO #15721  
1

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