Datasheet > 存储 > SRAM> EDI8L24129V12BC

EDI8L24129V12BC

更新时间： 2024-11-16 03:43:39

品牌	Logo	应用领域
WEDC		存储静态存储器
页数	文件大小	规格书
8页	240K
描述
128Kx24 SRAM 3.3 Volt

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EDI8L24129V12BC 数据手册

EDI8L24129V

White Electronic Designs

128Kx24 SRAM 3.3 Volt

FEATURES

DESCRIPTION

ꢀ

128Kx24 bit CMOS Static

The EDI8L24129VxxBC is a 3.3V, three megabit SRAM

constructed with three 128Kx8 die mounted on a multi-

layer laminate substrate. With 10 to 15ns access times,

x24 width and a 3.3V operating voltage, the EDI8L24129V

is ideal for creating a single chip memory solution for the

Motorola DSP5630x (Figure 3) or a two chip solution for

the Analog Devices SHARCTM DSP (Figure 4).

ꢀ

Random Access Memory Array

• Fast Access Times: 10, 12, and 15ns

• Master Output Enable and Write Control

• TTL Compatible Inputs and Outputs

• Fully Static, No Clocks

The single or dual chip memory solutions offer improved

system performance by reducing the length of board traces

and the number of board connections compared to using

multiple monolithic devices. For example, the capacitance

load on the data lines for the BGA package is 58ꢀ less

than a monolithic SOJ solution.

ꢀ

Surface Mount Package

• 119 Lead BGA (JEDEC MO-163), No. 391

• Small Footprint, 14mm x 22mm

• Multiple Ground Pins for Maximum

Noise Immunity

ꢀ

The JEDEC Standard 119 lead BGAprovides a 44ꢀ space

savings over using 128Kx8, 300mil wide SOJs and the BGA

package has a maximum height of 100 mils compared to

148 mils for the SOJ packages. The BGA package also

allows the use of the same manufacturing and inspection

techniques as the Motorola DSP, which is also in a BGA

package.

Single +3.3V ( 5ꢀ) Supply Operation

DSP Memory Solution

Motorola DSP5630xTM

Analog Devices SHARCTM

PIN CONFIGURATION

PIN NAMES

AØ-A16

Address Inputs

Chip Enable

I/00

I/01

I/02

I/03

I/04

I/05

Master Write Enable

Master Output Enable

I/012

I/013

I/014

I/015

I/016

I/017

V_CC

GND

V_CC

GND

V_CC

GND

V_CC

GND

V_CC

GND

V_CC

GND

V_CC

GND

VCC

GND

V_CC

GND

V_CC

GND

V_CC

GND

V_CC

GND

V_CC

GND

V_CC

DQØ-DQ23 Common Data Input/Output

V_CC

GND

Power (3.3V 5ꢀ%

Ground

GND

V_CC

No Connection

GND

V_CC

GND

V_CC

I/018

I/019

I/020

I/021

I/022

I/023

GND

V_CC

GND

V_CC

I/06

I/07

I/08

I/09

I/010

I/011

GND

V_CC

GND

V_CC

GND

A10

A14

A11

A12

A16

A13

A15

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2005

Rev. 5

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7 8

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与EDI8L24129V12BC相关器件

型号	品牌	获取价格	描述	数据表
EDI8L24129V12BI	WEDC	获取价格	128Kx24 SRAM 3.3 Volt
EDI8L24129V15BC	WEDC	获取价格	128Kx24 SRAM 3.3 Volt
EDI8L24129V15BI	WEDC	获取价格	128Kx24 SRAM 3.3 Volt
EDI8L24129V-BC	ETC	获取价格	SRAM MCP
EDI8L32128B10AC	WEDC	获取价格	Standard SRAM, 128KX32, 10ns, PQCC68,
EDI8L32128B12AC	ETC	获取价格	x32 SRAM
EDI8L32128C	WEDC	获取价格	128Kx32 CMOS High Speed Static RAM
EDI8L32128C10AC	WEDC	获取价格	SRAM Module, 128KX32, 10ns, CMOS, PQCC68, 0.990 X 0.990 INCH, PLASTIC, LCC-68
EDI8L32128C12AC	WEDC	获取价格	128Kx32 CMOS High Speed Static RAM
EDI8L32128C15AC	WEDC	获取价格	128Kx32 CMOS High Speed Static RAM

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