Datasheet > EDI8L21665V15BI

EDI8L21665V15BI

更新时间： 2024-11-15 23:50:11

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
5页	142K
描述
x16 SRAM Module

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中文翻译

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数据手册

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EDI8L21665V15BI 数据手册

EDI8L21665V

2x64Kx16 SRAM, DSP Memory Solution

FEATURES

DESCRIPTION

■ Access Times of 10, 12 and 15ns

The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed

with two 64Kx16 die mounted on a multi-layer laminate substrate.

The device is packaged in a 74 lead, 15mm by 15mm, BGA.

■ DSP Memory Solution

• Texas Instruments TMS320C5x

■ Packaging:

Operating with a 3.3V power supply and with access times as fast

as 10ns, the device allows the user to develop a fast external

memory for Texas Instuments’ TMS320C5x DSP.

• 74 pin BGA, JEDEC MO-151

The device consists of two separate banks of 64Kx16 of memory.

Each bank has a separate Chip Enable pin and higher order

address select pin. Bank ‘A’ is controlled using CE1\ and A15A.

Bank ‘B’ is controlled using CE2\ and A15B. The two banks have

common I/Os (DQ0-15) and control lines (WE\, E\ and G\). E\

connects to the mstrb\ pin of the C54x DSPs and is required for

write and read timing control.

■ 3.3V Operating Supply Voltage

■ Single Write Control and Output Enable Lines

■ One Chip Enable Line per Memory Bank

■ 50% Space Savings vs. Monolithic TSOPs

■ Upgrade Path Available in Same Footprint

■ Multiple VCC and VSS Pins

■ Reduced Inductance and Capacitance

PIN CONFIGURATION

BLOCK DIAGRAM

Vss Vcc Vcc DQ15 DQ14 Vcc DQ13 DQ11 DQ9 DQ8 NC

Vss Vcc Vcc Vss Vss Vcc DQ12 DQ10 DQ4 Vcc Vcc

64K X 16

SSRAM

15A

Vss Vss

A^15ACE1

Vcc

Vss Vcc

DQ3 DQ7

DQ⁵DQ0

DQ6 DQ1

DQ2 NC

64K X 16

SSRAM

A15

15A

Vss CE²

Vss A14

Vcc

Vss A12 Vcc A10

A^15BA13 Vcc A11

Vss A6

Vss A7

VSS

White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com

February 1999 Rev. 0

ECO #

12 3 4 5

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EDI8L24128C15BI	WEDC	获取价格	128Kx24 Asynchronous SRAM, 5V
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