EDI8L24128C
128Kx24 SRAM Module
ADVANCED
128Kx24 CMOS High Speed
Static RAM
Features
TheEDI8L24128Cisahighspeed,highperformance,three
megabit density Static RAM organized as a 128Kx24 bit
array.
Three Chip Enables, Write Control, and Output Enable
providetheuserwithaflexiblememorysolution. Theuser
mayindependentlyenableeachofthethree bytes.
Fullyasynchronouscircuitryisused,requiringnoclocksor
refreshing for operation and providing equal access and
cycle times for ease of use.
128Kx32 bit CMOS Static
Random Access Memory Array
• Fast Access Times: 15, 17, and 20
• IndividualByteEnables
• UserConfigurableOrganization
withMinimalAdditionalLogic
• MasterOutputEnableandWriteControl
• TTLCompatibleInputsandOutputs
• Fully Static, No Clocks
The EDI8L24128C, allows 3 megabits of memory to be
placedinlessthan0.990squareinchesofboardspace.
SurfaceMountPackage
• 68 Lead PLCC, No. 99 (JEDEC MO-47AE)
• SmallFootprint,0.990Sq.In.
• MultipleGroundPinsforMaximum
NoiseImmunity
Note: Solder Reflow temperature should not exceed 260°C for 10 seconds
Single +5V (±5%) Supply Operation
* Advance Information
Pin Configurations and Block Diagram
Pin Names
AØ-A16
EØ-E2
W
Address Inputs
Chip Enables (One per Byte)
Master Write Enable
Master Output Enable
Common Data Input/Output
Power (+5V±5%)
Ground
60 DQ14
DQ17
DQ18
DQ19
VSS 13
DQ20 14
DQ21
DQ22
DQ23
VCC
NC
NC
NC
NC
VSS
NC
10
11
12
59 DQ13
58 DQ12
57 VSS
56 DQ11
55 DQ10
54 DQ9
53 DQ8
52 VCC
51 DQ7
50 DQ6
49 DQ5
48 DQ4
47 VSS
46 DQ3
45 DQ2
44 DQ1
G
DQØ-DQ23
VCC
VSS
15
16
17
18
19
20
21
22
23
24
25
26
NC
No Connection
NC
NC
AØ-A16
G
17
128Kx24
Memory
Array
W
E0
E1
E2
DQØ-DQ7
DQ8-DQ15
DQ16-DQ23
Note: Pin 2 & 67 on the 64Kx24 (EDI8L2465C) and the 256Kx24
(EDI8L24256C) are word select pins.
ElectronicDesignsIncorporated
•OneResearchDrive•Westborough,MA01581USA•508-366-5151• FAX508-836-4850•
1
EDI8L24128C Rev. 7/98 ECO