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EBJ21EE8BDFA-AE-F PDF预览

EBJ21EE8BDFA-AE-F

更新时间: 2024-01-08 19:48:23
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
17页 227K
描述
2GB Unbuffered DDR3 SDRAM DIMM

EBJ21EE8BDFA-AE-F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.84Is Samacsys:N
访问模式:DUAL BANK PAGE BURST其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):667 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N240JESD-609代码:e4
长度:133.35 mm内存密度:38654705664 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:240字数:536870912 words
字数代码:512000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:512MX72输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM240,40封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.5 V认证状态:Not Qualified
刷新周期:8192座面最大高度:4 mm
自我刷新:YES最大待机电流:0.252 A
子类别:DRAMs最大压摆率:3.375 mA
最大供电电压 (Vsup):1.575 V最小供电电压 (Vsup):1.425 V
标称供电电压 (Vsup):1.5 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子节距:1 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:30 mmBase Number Matches:1

EBJ21EE8BDFA-AE-F 数据手册

 浏览型号EBJ21EE8BDFA-AE-F的Datasheet PDF文件第3页浏览型号EBJ21EE8BDFA-AE-F的Datasheet PDF文件第4页浏览型号EBJ21EE8BDFA-AE-F的Datasheet PDF文件第5页浏览型号EBJ21EE8BDFA-AE-F的Datasheet PDF文件第7页浏览型号EBJ21EE8BDFA-AE-F的Datasheet PDF文件第8页浏览型号EBJ21EE8BDFA-AE-F的Datasheet PDF文件第9页 
EBJ21EE8BDFA  
Serial PD Matrix  
-AE  
Hex  
-DJ  
Byte No. Function described  
Comments  
Hex  
92h  
Comments  
Number of serial PD bytes written/SPD device  
size/CRC coverage  
SPD revision  
0
92h  
176/256/0-116  
176/256/0-116  
1
10h  
0Bh  
02h  
02h  
11h  
00h  
09h  
0Bh  
52h  
01h  
08h  
0Fh  
00h  
1Ch  
00h  
69h  
78h  
69h  
Rev.1.0  
10h  
0Bh  
02h  
02h  
11h  
00h  
09h  
0Bh  
52h  
01h  
08h  
0Ch  
00h  
3Ch  
00h  
69h  
78h  
69h  
Rev.1.0  
2
Key byte/DRAM device type  
DDR3 SDRAM  
DDR3 SDRAM  
3
Key byte/module type  
UDIMM  
UDIMM  
4
SDRAM density and banks  
1G bits, 8 banks  
1G bits, 8 banks  
5
SDRAM addressing  
14 rows, 10 columns  
14 rows, 10 columns  
6
Module nominal voltage, VDD  
Module organization  
1.5V  
1.5V  
7
2 ranks/×8 bits  
2 ranks/×8 bits  
8
Module memory bus width  
72 bits/ECC  
72 bits/ECC  
9
Fine timebase (FTB) dividend/divisor  
Medium timebase (MTB) dividend  
Medium timebase (MTB) divisor  
SDRAM minimum cycle time (tCK (min.))  
Reserved  
5/2  
5/2  
10  
11  
12  
13  
14  
15  
16  
17  
18  
1
1
8
8
1.875ns  
1.5ns  
SDRAM /CAS latencies supported, LSB  
SDRAM /CAS latencies supported, MSB  
SDRAM minimum /CAS latencies time (tAA (min.))  
SDRAM write recovery time (tWR)  
SDRAM minimum /RAS to /CAS delay (tRCD)  
6, 7, 8  
6, 7, 8, 9  
13.125ns  
15ns  
13.125ns  
13.125ns  
15ns  
13.125ns  
SDRAM minimum row active to row  
active delay (tRRD)  
19  
3Ch  
7.5ns  
30h  
6.0ns  
20  
21  
SDRAM minimum row precharge time (tRP)  
SDRAM upper nibbles for tRAS and tRC  
69h  
11h  
13.125ns  
69h  
11h  
13.125ns  
SDRAM minimum active to precharge time  
(tRAS), LSB  
SDRAM minimum active to active /auto-refresh time  
(tRC), LSB  
SDRAM minimum refresh recovery time delay  
(tRFC), LSB  
SDRAM minimum refresh recovery time delay  
(tRFC), MSB  
SDRAM minimum internal write to read command  
delay (tWTR)  
SDRAM minimum internal read to precharge  
command delay (tRTP)  
22  
23  
24  
25  
26  
27  
2Ch  
95h  
70h  
03h  
3Ch  
3Ch  
37.5ns  
50.625ns  
110ns  
110ns  
7.5ns  
20h  
89h  
70h  
03h  
3Ch  
3Ch  
36ns  
49.125ns  
110ns  
110ns  
7.5ns  
7.5ns  
7.5ns  
28  
29  
30  
Upper nibble for tFAW  
01h  
2Ch  
83h  
37.5ns  
00h  
F0h  
83h  
30ns  
Minimum four activate window delay time (tFAW)  
SDRAM output drivers supported  
37.5ns  
30ns  
DLL-off, RZQ/6, 7  
DLL-off, RZQ/6, 7  
PASR/2X refresh at  
+85°C to +95°C  
PASR/2X refresh at  
+85°C to +95°C  
31  
SDRAM refresh options  
81h  
81h  
32  
33  
Module thermal sensor  
SDRAM device type  
80h  
00h  
00h  
Incorporated  
Standard  
80h  
00h  
00h  
Incorporated  
Standard  
34 to 59 Reserved  
Data Sheet E1586E20 (Ver. 2.0)  
6

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