Datasheet > 存储 > DRAM> EBE11UD8ABFA-4A-E

EBE11UD8ABFA-4A-E

更新时间： 2024-09-18 22:10:31

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器双倍数据速率
页数	文件大小	规格书
22页	172K
描述
1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)

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DATA SHEET

1GB Unbuffered DDR2 SDRAM DIMM

EBE11UD8ABFA (128M words × 64 bits, 2 Ranks)

Description

Features

The EBE11UD8ABFA is 128M words × 64 bits, 2 ranks

DDR2 SDRAM unbuffered module, mounting 16 pieces

of 512M bits DDR2 SDRAM sealed in FBGA (µBGA^)

package. Read and write operations are performed at

the cross points of the CK and the /CK. This high-

speed data transfer is realized by the 4 bits prefetch-

pipelined architecture. Data strobe (DQS and /DQS)

both for read and write are available for high speed and

reliable data bus design. By setting extended mode

set enable or disable. This module provides high

density mounting without utilizing surface mount

• 240-pin socket type dual in line memory module

(DIMM)

PCB height: 30.0mm

Lead pitch: 1.0mm

Lead-free

• 1.8V power supply

• Data rate: 533Mbps/400Mbps (max.)

• 1.8V (SSTL_18 compatible) I/O

• Double-data-rate architecture: two data transfers per

clock cycle

• Bi-directional, differential data strobe (DQS and

/DQS) is transmitted/received with data, to be used in

capturing data at the receiver

technology.

Decoupling capacitors are mounted

beside each FBGA (µBGA) on the module board.

• DQS is edge aligned with data for READs: center-

aligned with data for WRITEs

Note: Do not push the components or drop the

modules in order to avoid mechanical defects,

which may result in electrical defects.

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transitions with CK

transitions

• Commands entered on each positive CK edge: data

and data mask referenced to both edges of DQS

• Four internal banks for concurrent operation

(Component)

• Data mask (DM) for write data

• Burst lengths: 4, 8

• /CAS Latency (CL): 3, 4, 5

• Auto precharge operation for each burst access

• Auto refresh and self refresh modes

• 7.8µs average periodic refresh interval

• Posted CAS by programmable additive latency for

better command and data bus efficiency

• Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

• /DQS can be disabled for single-ended Data Strobe

operation

Document No. E0365E50 (Ver. 5.0)

Date Published August 2004 (K) Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2003-2004

12 3 4 5 6 7...22

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与EBE11UD8ABFA-4A-E相关器件

型号	品牌	获取价格	描述	数据表
EBE11UD8ABFA-4C	ELPIDA	获取价格	暂无描述
EBE11UD8ABFA-4C-E	ELPIDA	获取价格	DDR DRAM Module, 128MX64, 0.6ns, CMOS, LEAD FREE, DIMM-240
EBE11UD8ABFA-5C-E	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)
EBE11UD8ABFV	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM™
EBE11UD8ABFV-AE-E	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM™
EBE11UD8ABFV-BE-E	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM™
EBE11UD8AEFA	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)
EBE11UD8AEFA-4A-E	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)
EBE11UD8AEFA-5C-E	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)
EBE11UD8AEFA-6	ELPIDA	获取价格	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 64 bits, 2 Ranks)

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