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EBD52UD6ADSA-7B

更新时间： 2024-01-03 08:18:27

品牌	Logo	应用领域
尔必达 - ELPIDA		存储内存集成电路动态存储器双倍数据速率时钟
页数	文件大小	规格书
19页	253K
描述
512MB DDR SDRAM SO-(64M words x 64 bits, 2 Ranks)

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EBD52UD6ADSA-7B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SODIMM	包装说明：	DIMM, DIMM200,24
针数：	200	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.36
风险等级：	5.84	访问模式：	DUAL BANK PAGE BURST
最长访问时间：	0.75 ns	其他特性：	AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	133 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-XZMA-N200	内存密度：	4294967296 bit
内存集成电路类型：	DDR DRAM MODULE	内存宽度：	64
功能数量：	1	端口数量：	1
端子数量：	200	字数：	67108864 words
字数代码：	64000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	64MX64	输出特性：	3-STATE
封装主体材料：	UNSPECIFIED	封装代码：	DIMM
封装等效代码：	DIMM200,24	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	峰值回流温度（摄氏度）：	260
电源：	2.5 V	认证状态：	Not Qualified
刷新周期：	8192	自我刷新：	YES
子类别：	DRAMs	最大压摆率：	2.02 mA
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	NO
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	NO LEAD	端子节距：	0.6 mm
端子位置：	ZIG-ZAG	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

EBD52UD6ADSA-7B 数据手册

EBD52UD6ADSA

CAUTION FOR HANDLING MEMORY MODULES

When handling or inserting memory modules, be sure not to touch any components on the modules, such as

the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on

these components to prevent damaging them.

In particular, do not push module cover or drop the modules in order to protect from mechanical defects,

which would be electrical defects.

When re-packing memory modules, be sure the modules are not touching each other.

Modules in contact with other modules may cause excessive mechanical stress, which may damage the

modules.

MDE0202

NOTES FOR CMOS DEVICES

PRECAUTION AGAINST ESD FOR MOS DEVICES

Exposing the MOS devices to a strong electric field can cause destruction of the gate

oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop

generation of static electricity as much as possible, and quickly dissipate it, when once

it has occurred. Environmental control must be adequate. When it is dry, humidifier

should be used. It is recommended to avoid using insulators that easily build static

electricity. MOS devices must be stored and transported in an anti-static container,

static shielding bag or conductive material. All test and measurement tools including

work bench and floor should be grounded. The operator should be grounded using

wrist strap. MOS devices must not be touched with bare hands. Similar precautions

need to be taken for PW boards with semiconductor MOS devices on it.

HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES

No connection for CMOS devices input pins can be a cause of malfunction. If no

connection is provided to the input pins, it is possible that an internal input level may be

generated due to noise, etc., hence causing malfunction. CMOS devices behave

differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed

high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected

to V^DDor GND with a resistor, if it is considered to have a possibility of being an output

pin. The unused pins must be handled in accordance with the related specifications.

STATUS BEFORE INITIALIZATION OF MOS DEVICES

Power-on does not necessarily define initial status of MOS devices. Production process

of MOS does not define the initial operation status of the device. Immediately after the

power source is turned ON, the MOS devices with reset function have not yet been

initialized. Hence, power-on does not guarantee output pin levels, I/O settings or

contents of registers. MOS devices are not initialized until the reset signal is received.

Reset operation must be executed immediately after power-on for MOS devices having

reset function.

CME0107

Data Sheet E0425E30 (Ver. 3.0)

1...15 16 171819

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与EBD52UD6ADSA-7B相关器件

型号	品牌	描述	获取价格	数据表
EBD52UD6ADSA-7B-E	ELPIDA	512MB DDR SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)	获取价格
EBD52UD6ADSA-E	ELPIDA	512MB DDR SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)	获取价格
EBD64UB6ALF-75	ELPIDA	DDR DRAM Module, 8MX64, 0.75ns, CMOS, DIMM-184	获取价格
EBD64UB6ALF-7A	ELPIDA	DDR DRAM Module, 8MX64, 0.75ns, CMOS, DIMM-184	获取价格
EBDC19-KA-D	MINI	Bi-Directional Coupler Die	获取价格
EBDC19-KA-D+	MINI	Bi-Directional Coupler Die	获取价格

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