5秒后页面跳转
E28F001BX-T120 PDF预览

E28F001BX-T120

更新时间: 2024-01-30 00:03:54
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
33页 437K
描述
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

E28F001BX-T120 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:8 X 20 MM, 1.20 MM HEIGHT, TSOP-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91Is Samacsys:N
最长访问时间:120 ns其他特性:DEEP POWER-DOWN; TOP BOOT BLOCK
启动块:TOP命令用户界面:YES
数据轮询:NO耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V编程电压:12 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:8K,4K,112K最大待机电流:0.000001 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:NO类型:NOR TYPE
宽度:8 mmBase Number Matches:1

E28F001BX-T120 数据手册

 浏览型号E28F001BX-T120的Datasheet PDF文件第27页浏览型号E28F001BX-T120的Datasheet PDF文件第28页浏览型号E28F001BX-T120的Datasheet PDF文件第29页浏览型号E28F001BX-T120的Datasheet PDF文件第30页浏览型号E28F001BX-T120的Datasheet PDF文件第31页浏览型号E28F001BX-T120的Datasheet PDF文件第32页 
28F001BX-T/28F001BX-B  
Revision History  
Number  
Description  
-004  
Removed Preliminary classification.  
Latched address A in Figure 5.  
16  
Updated Boot Block Program and Erase section: ‘‘If boot block program or erase is attempted  
Ý
while RP is at V , either the Program Status or Erase Status bit will be set to ‘‘1’’,  
IH  
reflective of the operation being attempted and indicating boot block lock.’’  
Updated Figure 11, 28F001BX Erase Suspend/Resume Flowchart  
Added DC Characteristics typical current values  
Combined V Standby current and V Read current into one V Standby current spec with  
PP PP PP  
two test conditions (DC Characteristics table)  
Added maximum program/erase times to Erase and Programming Performance table.  
Added Figures 1316  
Added Extended Temperature proliferations  
Ý
PWD changed to RP for JEDEC standardization compatibility  
-005  
Ý
Ý
Revised symbols, i.e.; CE, OE, etc. to CE , OE , etc.  
-006  
-007  
Added specifications for -90 and -70 product versions.  
Added V  
CMOS Specification.  
OH  
Added reference to 28F001BN.  
33  

与E28F001BX-T120相关器件

型号 品牌 描述 获取价格 数据表
E28F001BX-T150 INTEL 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

获取价格

E28F001BX-T70 INTEL 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

获取价格

E28F001BX-T90 INTEL 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

获取价格

E28F002 ETC

获取价格

E28F002BC-T120 INTEL 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY

获取价格

E28F002BC-T80 INTEL 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY

获取价格