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E28F002BC-T80 PDF预览

E28F002BC-T80

更新时间: 2024-01-14 01:40:09
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
37页 454K
描述
28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY

E28F002BC-T80 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TSOP
包装说明:10 X 20 MM, TSOP-40针数:40
Reach Compliance Code:unknown风险等级:5.83
Is Samacsys:N最长访问时间:80 ns
其他特性:TOP BOOT BLOCKJESD-30 代码:R-PDSO-G40
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:NOT SPECIFIED
功能数量:1端子数量:40
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:12 V认证状态:COMMERCIAL
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:MOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10 mmBase Number Matches:1

E28F002BC-T80 数据手册

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PRELIMINARY  
E
28F002BC 2-MBIT (256K X 8)  
BOOT BLOCK FLASH MEMORY  
High Performance Read  
Extended Cycling Capability  
80/120 ns Max Access Time  
40 ns Max. Output Enable Time  
100,000 Block Erase Cycles  
Automated Byte Write and Block Erase  
Low Power Consumption  
Industry-Standard Command User  
Interface  
20 mA Typical Read Current  
x8-Only Input/Output Architecture  
Space-Constrained 8-bit  
Applications  
Status Registers  
Erase Suspend Capability  
SRAM-Compatible Write Interface  
Optimized Array Blocking Architecture  
One 16-KB Protected Boot Block  
Two 8-KB Parameter Blocks  
One 96-KB Main Block  
Reset/Deep Power-Down Input  
0.2 µA ICC Typical  
Provides Reset for Boot Operations  
Industry-Standard Surface Mount  
Packaging  
One 128-KB Main Block  
Top Boot Location  
40-Lead TSOP  
44-Lead PSOP  
40-Lead PDIP  
Hardware Data Protection Feature  
Erase/Write Lockout during Power  
Transitions  
ETOX™ IV Flash Technology  
5V Read  
Absolute Hardware Protection for  
Boot Block  
12V Write and Block Erase  
VPP = 12V ±5% Standard  
VPP = 12V ±10% Option  
Software EEPROM Emulation with  
Parameter Blocks  
Independent Software Vendor Support  
Intel’s 2-Mbit flash memory is an extension of the Boot Block architecture which includes block-selective  
erasure, automated write and erase operations, and a standard microprocessor interface. The 2-Mbit flash  
memory enhances the Boot Block architecture by adding more density and blocks, x8 input/output control,  
very high-speed, low-power, and industry-standard ROM-compatible pinout and surface mount packaging.  
The Intel 28F002BC is an 8-bit wide flash memory offering. This high-density flash memory provides user-  
selectable bus operation for 8-bit applications. The 28F002BC is a 2,097,152-bit nonvolatile memory  
organized as 262,144 bytes of information. It is offered in 44-lead PSOP, 40- lead PDIP and 40-lead TSOP  
package, which is ideal for space-constrained portable systems or any application with board space  
limitations.  
This device uses an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified  
byte write and block erasure. The 28F002BC provides block locations compatible with Intel’s MCS®-186  
family, 80286, 90860CA, and the Intel386™, Intel486™, Pentium®, and Pentium Pro microprocessors.  
The boot block includes a data protection feature to protect the boot code in critical applications. With a  
maximum access time of 80 ns, this high-performance 2-Mbit flash memory interfaces at zero wait-state to a  
wide range of microprocessors and microcontrollers. A deep power-down mode lowers the total VCC power  
consumption to 1 µW typical. This power savings is critical in hand-held battery powered systems. For very  
low-power applications using a 3.3V supply, refer to the Intel 28F002BV-T/B 2-Mbit SmartVoltage Boot Block  
Flash Memory datasheet. Manufactured on Intel’s 0.6 micron ETOX™ IV process technology, the 28F002BC  
flash memory provides world-class quality, reliability, and cost-effectiveness at the 2-Mbit density.  
October 1996  
Order Number: 290578-003  

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