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E28F001BX-B150 PDF预览

E28F001BX-B150

更新时间： 2024-11-13 22:09:31
品牌 Logo 应用领域
英特尔 - INTEL /
页数 文件大小 规格书
33页 437K
描述
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

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E28F001BX-B150 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP包装说明：8 X 20 MM, 1.20 MM HEIGHT, TSOP-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.91最长访问时间：150 ns
其他特性：DEEP POWER-DOWN; BOTTOM BOOT BLOCK启动块：BOTTOM
命令用户界面：YES数据轮询：NO
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-G32
JESD-609代码：e0长度：18.4 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：1,2,1端子数量：32
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：128KX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP32,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL电源：5 V
编程电压：12 V认证状态：Not Qualified
座面最大高度：1.2 mm部门规模：8K,4K,112K
最大待机电流：0.000001 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL切换位：NO
类型：NOR TYPE宽度：8 mm

E28F001BX-B150 数据手册

 浏览型号E28F001BX-B150的Datasheet PDF文件第2页浏览型号E28F001BX-B150的Datasheet PDF文件第3页浏览型号E28F001BX-B150的Datasheet PDF文件第4页浏览型号E28F001BX-B150的Datasheet PDF文件第5页浏览型号E28F001BX-B150的Datasheet PDF文件第6页浏览型号E28F001BX-B150的Datasheet PDF文件第7页 
1-MBIT (128K x 8)  
BOOT BLOCK FLASH MEMORY  
28F001BX-T/28F001BX-B/28F001BN-T/28F001BN-B  
Y
Y
High-Integration Blocked Architecture  
High-Performance Read  
Ð 70/75 ns, 90 ns, 120 ns, 150 ns  
Maximum Access Time  
Ð One 8 KB Boot Block w/Lock Out  
Ð Two 4 KB Parameter Blocks  
Ð One 112 KB Main Block  
g
Ð 5.0V 10% V  
CC  
Y
Y
Y
Y
Y
100,000 Erase/Program Cycles Per  
Block  
Hardware Data Protection Feature  
Ð Erase/Write Lockout during Power  
Transitions  
Simplified Program and Erase  
Ð Automated Algorithms via On-Chip  
Write State Machine (WSM)  
Advanced Packaging, JEDEC Pinouts  
Ð 32-Pin PDIP  
Ð 32-Lead PLCC, TSOP  
Y
Y
SRAM-Compatible Write Interface  
Deep Power-Down Mode  
ETOXTM II Nonvolatile Flash  
Technology  
Ð EPROM-Compatible Process Base  
Ð High-Volume Manufacturing  
Experience  
Ð 0.05 mA I  
Typical  
CC  
Ð 0.8 mA I Typical  
PP  
Y
g
12.0V 5% V  
PP  
Y
Extended Temperature Options  
Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with  
features that simplify write and allow block erase. These devices aid the system designer by combining the  
functions of several components into one, making boot block flash an innovative alternative to EPROM and  
EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the  
28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor  
interface.  
The 28F001BX-B and 28F001BX-T are 1,048,576 bit nonvolatile memories organized as 131,072 bytes of  
8 bits. They are offered in 32-pin plastic DIP, 32-lead PLCC and 32-lead TSOP packages. Pin assignment  
conform to JEDEC standards for byte-wide EPROMs. These devices use an integrated command port and  
state machine for simplified block erasure and byte reprogramming. The 28F001BX-T’s block locations pro-  
vide compatibility with microprocessors and microcontrollers that boot from high memory, such as Intel’s  
MCS -186 family, 80286, i386TM, i486TM, i860TM and 80960CA. With exactly the same memory segmentation,  
É
the 28F001BX-B memory map is tailored for microprocessors and microcontrollers that boot from low memory,  
such as Intel’s MCS-51, MCS-196, 80960KX and 80960SX families. All other features are identical, and unless  
otherwise noted, the term 28F001BX can refer to either device throughout the remainder of this document.  
The boot block section includes a reprogramming write lock out feature to guarantee data integrity. It is  
designed to contain secure code which will bring up the system minimally and download code to the other  
locations of the 28F001BX. Intel’s 28F001BX employs advanced CMOS circuitry for systems requiring high-  
performance access speeds, low power consumption, and immunity to noise. Its access time provides  
no-WAIT-state performance for a wide range of microprocessors and microcontrollers. A deep-powerdown  
mode lowers power consumption to 0.25 mW typical through V , crucial in laptop computer, handheld instru-  
CC  
mentation and other low-power applications. The RP power control input also provides absolute data protec-  
tion during system powerup or power loss.  
Ý
Manufactured on Intel’s ETOX process base, the 28F001BX builds on years of EPROM experience to yield the  
highest levels of quality, reliability, and cost-effectiveness.  
NOTE: The 28F001BN is equivalent to the 28F001BX.  
*Other brands and names are the property of their respective owners.  
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or  
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make  
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.  
©
COPYRIGHT INTEL CORPORATION, 1995  
November 1995  
Order Number: 290406-007  
1234567...33

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