Datasheet > 存储 > 闪存> E28F001BX-T120

E28F001BX-T120

更新时间： 2024-02-29 03:42:42

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
33页	437K
描述
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

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技术参数
数据手册

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E28F001BX-T120 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	8 X 20 MM, 1.20 MM HEIGHT, TSOP-32
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.91	Is Samacsys：	N
最长访问时间：	120 ns	其他特性：	DEEP POWER-DOWN; TOP BOOT BLOCK
启动块：	TOP	命令用户界面：	YES
数据轮询：	NO	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G32	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	1048576 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	部门数/规模：	1,2,1
端子数量：	32	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	128KX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP32,.8,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
部门规模：	8K,4K,112K	最大待机电流：	0.000001 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
切换位：	NO	类型：	NOR TYPE
宽度：	8 mm	Base Number Matches：	1

E28F001BX-T120 数据手册

1-MBIT (128K x 8)

BOOT BLOCK FLASH MEMORY

28F001BX-T/28F001BX-B/28F001BN-T/28F001BN-B

High-Integration Blocked Architecture

High-Performance Read

Ð 70/75 ns, 90 ns, 120 ns, 150 ns

Maximum Access Time

Ð One 8 KB Boot Block w/Lock Out

Ð Two 4 KB Parameter Blocks

Ð One 112 KB Main Block

Ð 5.0V 10% V

100,000 Erase/Program Cycles Per

Block

Hardware Data Protection Feature

Ð Erase/Write Lockout during Power

Transitions

Simplified Program and Erase

Ð Automated Algorithms via On-Chip

Write State Machine (WSM)

Advanced Packaging, JEDEC Pinouts

Ð 32-Pin PDIP

Ð 32-Lead PLCC, TSOP

SRAM-Compatible Write Interface

Deep Power-Down Mode

ETOX^TMII Nonvolatile Flash

Technology

Ð EPROM-Compatible Process Base

Ð High-Volume Manufacturing

Experience

Ð 0.05 mA I

Typical

Ð 0.8 mA I Typical

12.0V 5% V

Extended Temperature Options

Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with

features that simplify write and allow block erase. These devices aid the system designer by combining the

functions of several components into one, making boot block flash an innovative alternative to EPROM and

EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the

28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor

interface.

The 28F001BX-B and 28F001BX-T are 1,048,576 bit nonvolatile memories organized as 131,072 bytes of

8 bits. They are offered in 32-pin plastic DIP, 32-lead PLCC and 32-lead TSOP packages. Pin assignment

conform to JEDEC standards for byte-wide EPROMs. These devices use an integrated command port and

state machine for simplified block erasure and byte reprogramming. The 28F001BX-T’s block locations pro-

vide compatibility with microprocessors and microcontrollers that boot from high memory, such as Intel’s

MCS -186 family, 80286, i386^TM, i486^TM, i860^TMand 80960CA. With exactly the same memory segmentation,

the 28F001BX-B memory map is tailored for microprocessors and microcontrollers that boot from low memory,

such as Intel’s MCS-51, MCS-196, 80960KX and 80960SX families. All other features are identical, and unless

otherwise noted, the term 28F001BX can refer to either device throughout the remainder of this document.

The boot block section includes a reprogramming write lock out feature to guarantee data integrity. It is

designed to contain secure code which will bring up the system minimally and download code to the other

locations of the 28F001BX. Intel’s 28F001BX employs advanced CMOS circuitry for systems requiring high-

performance access speeds, low power consumption, and immunity to noise. Its access time provides

no-WAIT-state performance for a wide range of microprocessors and microcontrollers. A deep-powerdown

mode lowers power consumption to 0.25 mW typical through V , crucial in laptop computer, handheld instru-

mentation and other low-power applications. The RP power control input also provides absolute data protec-

tion during system powerup or power loss.

Manufactured on Intel’s ETOX process base, the 28F001BX builds on years of EPROM experience to yield the

highest levels of quality, reliability, and cost-effectiveness.

NOTE: The 28F001BN is equivalent to the 28F001BX.

*Other brands and names are the property of their respective owners.

Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or

copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make

changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.

November 1995

Order Number: 290406-007

12 3 4 5 6 7...33

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