Datasheet > DZ5X068D0R

DZ5X068D0R

更新时间： 2024-11-07 12:55:43

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	331K
描述
Silicon epitaxial planar type

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DZ5X068D0R 数据手册

DZ5X068D

Silicon epitaxial planar type

Unit: mm

For surge absorption circuits

 Features

 Excellent rising characteristics of zener current I_Z

 Low zener operating resistance R_Z

 Halogen-free / RoHs compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

 Marking Symbol: 02

ꢀBasic Part Number

Dual DZ3X068D (Common anode)

 Packaging

1: Cathode -1

2:Anode-1, 2, 3, 4

3: Cathode -2

Panasonic

4: Cathode -3

5: Cathode -4

DZ5X068D0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Absolute Maximum Ratings T_a= 25°C

Mini5-G3-B

SC-74A

JEITA

Parameter

Symbol

P_T

Rating

200

Unit

Code

MO-178

Total power dissipation^*

Electrostatic discharge ^*

ESD

T_j

±10

Junction temperature

Storage temperature

150

°C

stg

–55 to +150

°C

Note) 1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm)(4 diode total)

Solder in (0.7 mm × 1.0 mm)

2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)

 Common Electrical Characteristics T_a= 25°C±3°C

Parameter

Forward voltage

Symbol

V_F

Conditions

Min

Typ

Max

1.0

7.14

Unit

I_F= 10 mA

I_Z= 5 mA

I_Z= 0.5 mA

V_R= 4.0 V

I_Z= 5 mA

1,2

Zener voltage ^*

V_Z

6.46

Zener operating resistance

Zener rise operating resistance

Reverse current

R_Z

Ω

R_ZK

I_R

Ω

0.1

µA

Temparature coefﬁcient of zener voltage ^*

S_Z

3.1

mV/°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. 1: The temperature must be controlled 25°C for V measurement. V value measured at other temperature must be adjusted to V (25°C)

: V guaranteed 20 ms after current ﬂow.

3: T = 25°C to 150°C

Publication date: July 2012

Ver. BED

12 3 4

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