Datasheet > DXT3150

DXT3150

更新时间： 2024-10-17 09:59:31

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	200K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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DXT3150 数据手册

DXT3150

NPN SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

SOT89-3L

Mechanical Data

TOR

LLEC

2,4

•

Case: SOT89-3L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

3 E

2 C

1 B

C 4

•

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

ASE

•

Marking & Type Code Information: See Page 3

Ordering Information: See Page 3

Weight: 0.072 grams (approximate)

EMITTER

Schematic and Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Thermal Characteristics

Characteristic

Symbol

P_D

R_θ

Value

Unit

Power Dissipation (Note 3) @ T_A= 25°C

125

°C/W

Thermal Resistance, Junction to Ambient Air (Note 3) @T_A= 25°C

Operating and Storage Temperature Range

-55 to +150

°C

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Symbol

Min

Typ

Max

Unit

Test Conditions

⎯

V_(BR)CEO

I_CBO

⎯

1.0

_C= 10mA, I_B= 0

μA

V_CB= 50V, I_E= 0

Emitter Cut-off Current

1.0

I_EBO

μA V_EB= 7.0V, I_C= 0

ON CHARACTERISTICS (Note 4)

0.35

0.50

I_C= 3.0A, I_B= 150mA

I_C= 4.0A, I_B= 200mA

I_C= 3.0A, I_B= 150mA

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)

V_BE(SAT)

⎯

1.10

1.40

_C= 4.0A, I_B= 200mA

550

⎯

I_C= 500mA, V_CE= 2.0V

I_C= 2.0A, V_CE= 2.0V

250

150

DC Current Gain

h_FE

⎯

_C= 5.0A, V_CE= 2.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Output Capacitance

I_C= 50mA, V_CE= 6.0V,

f = 100MHz

V_CB= 10V, I_E= 0, f = 1MHz

220

MHz

f_T

⎯

C_obo

⎯

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31157 Rev. 3 - 2

1 of 3

www.diodes.com

DXT3150

12 3

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