5秒后页面跳转
DXT3904-13 PDF预览

DXT3904-13

更新时间: 2024-10-17 09:59:31
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 239K
描述
NPN SURFACE MOUNT TRANSISTOR

DXT3904-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:19 weeks风险等级:1.75
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):250 ns最大开启时间(吨):70 ns
Base Number Matches:1

DXT3904-13 数据手册

 浏览型号DXT3904-13的Datasheet PDF文件第2页浏览型号DXT3904-13的Datasheet PDF文件第3页浏览型号DXT3904-13的Datasheet PDF文件第4页 
DXT3904  
NPN SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Complementary PNP Type Available (DXT3906)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072 grams (approximate)  
TOR  
LLEC  
2,4  
CO  
3 E  
2 C  
1 B  
C 4  
T
1
ASE  
B
3
EW  
VI  
OP  
EMITTER  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
60  
Unit  
V
Collector-Emitter Voltage  
40  
V
Emitter-Base Voltage  
6.0  
V
Collector Current – Continuous  
200  
mA  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS31141 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DXT3904  
© Diodes Incorporated  

与DXT3904-13相关器件

型号 品牌 获取价格 描述 数据表
DXT3906 DIODES

获取价格

PNP SURFACE MOUNT TRANSISTOR
DXT3906 DCCOM

获取价格

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
DXT3906-13 DIODES

获取价格

PNP SURFACE MOUNT TRANSISTOR
DXT-433-TX2A RADIOMETRIX

获取价格

DX series remote control boards
DXT-434.650-NTX2B RADIOMETRIX

获取价格

DX series remote control boards
DXT458P5 DIODES

获取价格

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR Po
DXT458P5-13 DIODES

获取价格

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR Po
DXT4910.000A20 DUBILIER

获取价格

CRYSTALS RESISTANCE WELDED HOLDER DXT49
DXT4910.000A203 DUBILIER

获取价格

CRYSTALS RESISTANCE WELDED HOLDER DXT49
DXT4910.000A20I DUBILIER

获取价格

CRYSTALS RESISTANCE WELDED HOLDER DXT49